A Comprehensive Physics-Based Current–Voltage SPICE Compact Model for 2-D-Material-Based Top-Contact Bottom-Gated Schottky-Barrier FETs

A drain current formula for two-dimensional field-effect transistors with one-shot convergence algorithm

“…The article proves that if this condition is violated, an anomalous current hump will appear on the characteristic transfer curve, which has not yet been emphasized experimentally (as a note: the current humps reported in experiments [15,[30][31][32][33][34][35] occur at lower drain-source biases, which contradicts the theoretically expected higher drain-source biases, and are thus more likely to be caused by significant gate leakage current rather than excess carriers that are not recombined). Although the final proposal seems natural and has even been assumed in previous literature [9,28,36], the QFLPS approach provides a systematic explanation. More importantly, it provides a phase diagram analysis method for understanding device operation modes, covering both ambipolar and unipolar devices.…”

“…Here, a functional form is proposed for the general temperature solution induced by the zerotemperature limit (ZTL) of the system, and then a linear approximation operator L is developed to yield the optimal thermal-broadening coefficients. The previously reported techniques were usually based on the local analytical formula, such as [28] that used the Boltzmann approximation stemming from the subthreshold region. The ZTL algorithm proposed here offers a globally applicable initial formula thus featuring robust convergence.…”

“…As a comparison, other initial generation schemes are studied. Besides the main algorithm defined by equations ( 34) and ( 35), alternative methods include: (a) φ 1 [s 2D ], where s 2D is given by solving equation ( 32), (b) ZTL φ 0 , given by equation (22), and (c) the Boltzmann approximation-based initials reported by [28], which can be expressed, following the nomenclature of this work, as…”

“…However, this brings about tremendous computational cost, against the spirit of a compact physical model. Without detailed research on the coupling relationship, certain pragmatic methods have to be adopted to overcome this problem, such as the equivalent circuit model [27], which equates ambipolar FETs to the parallel connection of n-type and p-type transistors or simply ignoring the QFL splitting that should exist [28]. Although an article intentionally discussed this issue [29], an ansatz of simply discarding the coupling term was adopted without any further explanations.…”

Landauer‐QFLPS Model for Mixed Schottky‐Ohmic Contact Two‐Dimensional Transistors

“…[41] The QFLPS theory features ambipolar integrity and diagram representability compared with the early reported driftdiffusion formula-based models. [61][62][63][64][65][66][67] Ambipolar integrity means that the Coulomb coupling between electrons and holes in a semiconductor system is effectively included by the quasi-equilibrium approximation (QEA) derived from the QFLPS theory, which was usually missed in previous works. Simply discarding the terms can yield significant difference compared with the exact continuity equation-based solutions.…”