2023
DOI: 10.1088/2053-1583/acf0d0
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A drain current formula for two-dimensional field-effect transistors with one-shot convergence algorithm

Zhao-Yi Yan,
Zhan Hou,
Fan Wu
et al.

Abstract: Two-dimensional material-based field-effect transistors (2DM-FETs) exhibit both ambipolar and unipolar carrier transports. To physically and compactly cover both cases, a quasi-Fermilevel phase space (QFLPS) approach was proposed, but it still involves complicated integration operations. This article aims at improving the numerical efficiency of the QFLPS model by several orders of magnitude so that it can readily be implemented in a standard circuit simulator. We first rigorously derive the integral-free form… Show more

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Cited by 2 publications
(3 citation statements)
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“…To overcome this, in this work a zero‐temperature‐limit algorithm with one‐shot convergence was developed in ref. [68] in order that the influence becomes negligible and the theory genuinely stands as a powerful basis for incorporating contact‐effect into the model.…”
Section: Methodsmentioning
confidence: 99%
See 2 more Smart Citations
“…To overcome this, in this work a zero‐temperature‐limit algorithm with one‐shot convergence was developed in ref. [68] in order that the influence becomes negligible and the theory genuinely stands as a powerful basis for incorporating contact‐effect into the model.…”
Section: Methodsmentioning
confidence: 99%
“…The functional relations of the electron ( n ) and hole ( p ) densities with their QFLs (ε Fn and ε Fp , respectively) are implicitly determined according to the electrostatic–statistic relations (ESRs), which include three equations given as follows. [ 41,68 ]…”
Section: Methodsmentioning
confidence: 99%
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