A comprehensive model of PMOS NBTI degradation

Abstract

Negative bias temperature instability has become an important reliability concern for ultra-scaled Silicon IC technology with significant implications for both analog and digital circuit design. In this paper, we construct a comprehensive model for NBTI phenomena within the framework of the standard reaction-diffusion model. We demonstrate how to solve the reaction-diffusion equations in a way that emphasizes the physical aspects of the degradation process and allows easy generalization of the existing work. We also augment this basic reaction-diffusion model by including the temperature and field-dependence of the NBTI phenomena so that reliability projections can be made under arbitrary circuit operating conditions.

Intrinsic Reliability Improvement in Biaxially Strained SiGe p-MOSFETs

“…We clearly see that C-V of conventional Si device is shifted towards the left by a value ~36mV. [9], [10], [13]. It is to be noted that extracted n is independent of stress V G , which suggests absence of bulk trap generation [16] in the range of stress bias used for this study.…”

“…Tight-Binding (TB) [11], [12] NBTI study was performed on Si, SiGe and Si/SiGe pMOSFETs. It is now well known that NBTI is oxide field driven (Eox) and by stress bias (V G ) [8], [9], [10]. For comparison of NBTI degradation in these devices, effective gate oxide field was estimated from capacitance-voltage (C-V) measurements (Fig.1 (c)).…”

Lightweight digital hardware random number generators

“…The key idea is that each SRAM cell has a high probability that it is initialized to some value, either 0 or 1, after each power-up. Although the "stability " of the SRAM PUF cells has always been a problem, recently, it has been experimentally demonstrated that the use of device aging [20][21] [22], specifically hot carrier injection (HCI) [23] [24], can completely eliminate this problem.…”

Matched public PUF: Ultra low energy security platform

“…Negative bias temperature instability (NBTI) and hot carrier injection (HCI) are examples of intrinsic phenomena of deep submicron silicon technologies that have detrimental impacts on reliability and speed of operation [14]. Recently, they have attracted a great deal of attention mainly due to reliability issues.…”

“…For mPPUF matching, we use static (DC) aging, which can be reversed by removing the applied stress [14]. Note that the model follows a fractional power law; in other words, a relatively large amount of aging happens in a relatively short amount of time, when the input vectors are first applied.…”