A comprehensive diagram to grow (0001)InGaN alloys by molecular beam epitaxy

Abstract

The composition, strain and surface morphology of (0001 )InGaN layers are investigated as a function of growth temperature (460-645 °C) and impinging In flux. Three different growth regimes: nitrogen-rich, metal-rich and intermediate metal-rich, are clearly identified and found to be in correlation with surface morphology and strain relaxation. Best epilayers' quality is obtained when growing under intermediate metal-rich conditions, with 1 -2 monolayers thick In ad-coverage. For a given In flux, the In incorporation decreases with increasing growth temperature due to InN thermal decomposition that follows an Arrhenius behavior with 1.84 + 0.12 eV activation energy.

Comparison of the Luminous Efficiencies of Ga- and N-PolarInxGa1−xN/InFernández-Garrido1, Lähnemann2, Hauswald3 et al. 2016Phys. Rev. Applied171140View full textAdd to dashboardCite

“…The as-received SiC substrates were prepared following the procedure described in Ref. 18 21 For all these samples, the nominal width of the barriers and the thickness of the final cap layer were 10.1 and 30 nm, respectively. The nominal width of the QWs was varied for each type of substrate between 2.6 and 12 nm.…”

High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics

“…The In composition in InGaN layers depends critically on the growth temperature, 6,[16][17][18][19][20] being therefore necessary to establish a reference parameter that guarantees its reproducibility. For the PAMBE growth of GaN, the substrate temperature in the range of 700À750 C is calibrated by the Ga desorption time measured by RHEED.…”

“…PAMBE growth of InGaN has been reported following various approaches. Gacevic et al 6 presented a growth diagram of InGaN with In content up to 50% and identified an intermediate metal rich regime, with 1À2 monolayer (ML) thick In coverage, which provided best InGaN quality in terms of surface morphology. On the other hand, Yamaguchi et al 7 showed the growth of thick and uniform In x Ga 1-x N films with the entire alloy composition range (0.2 x 1) using the droplet elimination radical-beam irradiation method.…”

Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy

“…It can be employed in order to take advantage of metastability, and to avoid phase separation, by exploiting low growth temperatures (T gr ) so that the mobility of indium atoms is reduced. 15 Due to the easier dissociation of In-N bonds, indium incorporation is favored at T gr < 500 C. 15,16 On the other hand, the surfactant effect of the indium adlayer formed under metal enrichment of the surface favors the desired two-dimensional (2D) growth. 17 Iliopoulos et al 18 have demonstrated PAMBE-growth of (0001) InGaN films over the entire composition range with high indium incorporation efficiency, using a low temperature range and almost stoichiometric flux ratios.…”