A Complete Scheme for Creating Predefined Networks of Individual Carbon Nanotubes

Abrams, Ze’ev R.; Ioffe, Z. M.; Tsukernik, A.; Cheshnovsky, Ori; Hanein, Yael

doi:10.1021/nl071058f

Cited by 29 publications

(24 citation statements)

References 34 publications

(66 reference statements)

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“…This can be routinely achieved using such methods as physical vapor deposition (PVD) , spincasting (5), and printing (6). However, all these methods lack selectivity and require further steps to isolate the catalyst at specific locations.…”

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confidence: 99%

Growth and Electrical Characterization of Horizontally Aligned CNTs

Santini¹,

Cott²,

Negreira³

et al. 2009

ECS Trans.

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Nickel catalyst nanoparticles acting as nucleating seeds for carbon nanotube (CNT) growth were selectively deposited on the sidewalls of titanium nitride (TiN) electrodes by electrochemical deposition (ECD) from a Ni 2+ electrolyte solution. Horizontal aligned CNTs were grown selectively from the sidewalls of these TiN electrodes forming a bridging CNT contact between the electrode gaps. Current-voltage measurements demonstrated this could be a promising technique towards nanoscale interconnections and nanoelectronic devices with resistance values for the bridging CNTs as low as 300 .To realise the potential of CNTs in microelectronic applications (1), sufficient control over their location and orientation should be demonstrated. Typically, control over the horizontal growth of CNTs has been achieved using controlled gas flows (2), electric fields (3) and CNT-surface interactions on faceted substrates (4). Herein, we pursue an alternative approach, by placing the CNT catalyst selectively on the horizontal sidewalls of prefabricated TiN electrodes. CNTs were grown across TiN electrodes of 200 nm thickness fabricated on 200 nm oxidised p+ implanted doped silicon substrates. A crosssectional view of these electrodes is outlined in Figure 1a. There is a direct connection between one (Figure 1a) or both electrodes through nickel silicide pads and the Si substrate. For clarity we will denote both electrode configurations as A and B, respectively. In configuration A only one electrode is connected to the substrate whereas configuration B has both connected. One of the electrodes in B can be disconnected after catalyst placement and CNT growth (vida infra) to avoid a competing electrical pathway through the Si substrate. On the top surface of the electrodes an insulating 30 nm thick silicon oxynitride (SiON) hard mask was deposited. These electrode structures are connected within a 4-point probe configuration (Figure 1b). This allows for accurate CNT resistance measurements by eliminating contact resistances and the resistances of the leads.The first challenge in achieving CNTs bridging the electrodes is to deposit metal catalyst on the sidewall of the electrodes. This can be routinely achieved using such methods as physical vapor deposition (PVD) , spincasting (5), and printing (6). However, all these methods lack selectivity and require further steps to isolate the catalyst at specific locations. Electrochemical deposition (ECD) has an intrinsic selective nature in that metal deposition from solution only occurs on conductive surfaces contacted as the ECS Transactions, 18 (1) 845-850 (2009) 10.1149/1.3096544 © The Electrochemical Society 845 ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.111.121.42 Downloaded on 2015-06-25 to IP

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confidence: 99%

Growth and Electrical Characterization of Horizontally Aligned CNTs

Santini¹,

Cott²,

Negreira³

et al. 2009

ECS Trans.

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“…The morphology of the SWNT arrays could also be manipulated via the transfer‐printing mediator 115, 116. Further development made it possible to place individual SWNTs with specific chiralities on exact surface locations for fabricating purpose‐directed electronic devices and circuits in a well‐controlled fashion 117–119…”

Section: Transfer Printing and Manipulation Of Ultralong Swntsmentioning

confidence: 99%

Aligned, Ultralong Single‐Walled Carbon Nanotubes: From Synthesis, Sorting, to Electronic Devices

et al. 2010

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Aligned, ultralong single-walled carbon nanotubes (SWNTs) represent attractive building blocks for nanoelectronics. The structural uniformity along their tube axis and well-ordered two-dimensional architectures on wafer surfaces may provide a straightforward platform for fabricating high-performance SWNT-based integrated circuits. On the way towards future nanoelectronic devices, many challenges for such a specific system also exist. This Review summarizes the recent advances in the synthesis, identification and sorting, transfer printing and manipulation, device fabrication and integration of aligned, ultralong SWNTs in detail together with discussion on their major challenges and opportunities for their practical application.

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“…Based on the selfassembly mechanism described above, we developed a complete scheme suited for the production of large CNT arrays with pre-defined, controlled geometry (i.e., position and alignment) as well as easily determined chirality (i.e., metallic or semiconducting nanotubes) [18]. First, SWCNTs are grown between microfabricated silicon pillars creating networks of individually isolated, taut, suspended-SWCNTs (susSWCNTs) (Fig.…”

Section: Suspended Tube Networkmentioning

confidence: 99%

Carbon nanotube integration into MEMS devices

Hanein¹

2010

Physica Status Solidi (b)

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Phone: þ972 3 6407698, Fax: þ972 3 6423508After two decades of extensive investigation into the unique properties of carbon nanotubes (CNTs), the focus is now shifting toward the utilization of CNTs in real applications. Of particular interest is the use of CNTs in microtechnologies. To this end, CNT integration methods have to be optimized to guarantee yield, low-cost, and high performances. Here we describe three general schemes which we developed over the past several years which facilitate the direct integration of CNTs into microfabricated devices in a seamless manner. Using the chemical vapor deposition (CVD) method, and carefully designed pre-patterned substrates, tubes can be easily deposited at very high fidelity. Through these integration schemes, the CNT growth step becomes equivalent to many other deposition steps of other materials. Using the processes we developed, a substrate can be introduced into the CNT CVD system and CNTs will grow at the right location to match the specific application. We briefly demonstrate two applications for which these techniques may be applied.TEM image of a CNT grown on a grid showing the strong surface effects on CNT growth.

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A Complete Scheme for Creating Predefined Networks of Individual Carbon Nanotubes

Cited by 29 publications

References 34 publications

Growth and Electrical Characterization of Horizontally Aligned CNTs

Growth and Electrical Characterization of Horizontally Aligned CNTs

Aligned, Ultralong Single‐Walled Carbon Nanotubes: From Synthesis, Sorting, to Electronic Devices

Carbon nanotube integration into MEMS devices

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