A comparison of techniques for nondestructive composition measurements in CdZnTe substrates

On determination of Cd1–xZnxTe composition from an analysis of the 4.2, 77 and 295 K edge photoluminescence spectra

“…Fig. 1 illustrates the known (see [1,5,9,10,13] [5,10]. They were found by adding the A 0 X exciton binding energy ε bA =16 meV to the measured hν m (A 0 X) vs. x dependences (it is assumed that ε bA ≠ φ(x)).…”

“…They were found by adding the A 0 X exciton binding energy ε bA =16 meV to the measured hν m (A 0 X) vs. x dependences (it is assumed that ε bA ≠ φ(x)). So, the given in [5,10] band gap E g vs. x dependences were replotted by us into primary dependences hν m (A 0 X) =E g -ε bA vs. x (x ≤ 0.065 -0.07) by taking into account the ε bA value. They are shown in Fig.…”

“…In addition to the stated, some other arguments how to identify the A 0 X induced emission band in the 4.2 K Cd 1-x Zn x Te edge luminescence spectrum, when in it only one of two excitonic emission bands are observed are given in [15,16]. [1,5,9,10], the obtained x value is x = x 0 + Δx = 0.073 ± 0.012 (x 0 is the average x value and Δx is deviation of the x value from the average one), i.e. is found with a rather low accuracy (the relative inaccuracy of x determination Δx /x 0 ≈ ±23% is rather large).…”

“…So, the luminescent method -measurements of the 1.6 [8], 2 [4], 4.2 [1,5,9,10,13], 12 [2], 77 [6], 80 K [3] and room temperature T = 295…300 K [2,7,11] peak positions of the edge emission bands in principle could be used for finding composition of 1 In many of the cited works the band gap energy E g vs. x dependences are given. They were found from the obtained in the experiment peak positions of the exciton (carrier) induced emission hν m vs. x dependences by taking into account exciton (carrier) binding energies.…”

Advanced band structure and optical properties of disordered ZnCdTe2 within mBJLDA approach

“…These alloys were already prepared as single crystals grown by the Bridgman method and travelling heater technique [7][8][9][10][11] . ZnxCd1-xTe alloys are the basic elements in the fabrication of the solid-state detectors for medical applications 12 and astronomical physics [13][14] .…”