A comparison of structures and properties of SiNx and SiOx films prepared by PECVD

Xu, Xiangdong; Zhang, Liangchang; Huang, Long; He, Qiong; Fan, Ting; Yang, Zhe; Jiang, Yadong; Li, Zhanping

doi:10.1016/j.jnoncrysol.2011.08.029

Cited by 11 publications

(7 citation statements)

References 31 publications

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“…Because the dangling H atoms of the N–H and N–H 2 bonds cannot interconnect with other Si or N atoms, structural voids are formed. Rui Xu et al reported that the polyhydrides such as Si–H n and N–H n can reflect the degree of microvoids in the films . The FTIR result highly coincided with the previous literature that there are more microvoids in the films with higher N content.…”

Section: Resultssupporting

confidence: 84%

“…Moreover, Figure 4c shows the Gaussian deconvolution of the FTIR peaks in the range of 700−1400 cm −1 , which includes the N−H wagging, Si−O, and Si−N asymmetric stretching modes. The Si−O stretching 16 The FTIR result highly coincided with the previous literature that there are more microvoids in the films with higher N content. Therefore, we suggest that the enhancement in quantitatively measured intrinsic mechanical properties of SiN x thin films is inversely proportional to the ratio of the dangling H of the N−H and N−H 2 bonds.…”

Section: Characterization Of T- N- and C-sinsupporting

confidence: 88%

“…Several studies have been conducted to investigate the mechanical properties of SiN x thin films using nanoindentation, bulge tests, micro-electromechanical systems, and in-situ optical microscopy. ,− Unfortunately, because of their ultra-thinness (thickness of the order of tens or hundreds of nanometers), the determination of the mechanical properties of SiN x thin films at the application level is challenging. For example, nanoindentation utilizes the results from an indentation depth that is less than one-tenth of the film thickness to exclude substrate effects .…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Intrinsic Mechanical Properties of Free-Standing SiN_x Thin Films Depending on PECVD Conditions for Controlling Residual Stress

Soo

Yang

et al. 2022

ACS Appl. Electron. Mater.

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Silicon nitride (SiN x ) thin films are crucial in electronic devices and are used as gate dielectrics and diffusion barriers for thin-film transistors (TFTs). Plasma-enhanced chemical vapor deposition (PECVD) has been used for the deposition of SiN x thin films because it allows the tuning of the properties of SiN x thin films by changing the deposition conditions depending on their usage. However, the intrinsic mechanical properties of SiN x thin films depending on the PECVD conditions have rarely been studied because of extreme brittleness and inherent residual stress of SiN x thin films. In this study, the intrinsic mechanical properties of PECVD SiN x thin films are measured from free-standing tensile tests. For the test, 130−150 nm-thick SiN x thin films are prepared using three types of PECVD conditions to induce tensile (T-SiN x ), neutral (N-SiN x ), and compressive (C-SiN x ) residual stress. Compared with the T-SiN x thin films (77 GPa, 0.10%, and 83 MPa, respectively), the C-SiN x thin films shows an approximately 45% increase in Young's modulus (112 GPa), a twofold enhancement of the elongation (0.21%), and a threefold improvement in the fracture strength (226 MPa). The improved intrinsic mechanical properties of C-SiN x thin films compared with those of the T-SiN x and N-SiN x thin films are attributed to increased film density (2.42−2.64 g/cm 3 ) and reduced dangling H of the N−H bonding, which are induced by their deposition conditions of higher RF power, lower chamber pressure, and lower NH 3 feed ratios. We anticipate that the mechanism of changing the mechanical properties can be extended to fabricate mechanically robust SiN x thin films as dielectric layers for flexible devices.

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Section: Resultssupporting

confidence: 84%

Section: Characterization Of T- N- and C-sinsupporting

confidence: 88%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Intrinsic Mechanical Properties of Free-Standing SiN_x Thin Films Depending on PECVD Conditions for Controlling Residual Stress

Soo

Yang

et al. 2022

ACS Appl. Electron. Mater.

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“…Therefore, it is important to control the thickness and the elastic modulus of rigid islands (Figures S6 and S7, Supporting Information). An array of SiO 2 with Young's modulus of 119 GPa [ 41 ] or SiN x with Young's modulus of 290 GPa [ 41 ] rigid islands on a polyimide film was tested. Since we observed that rigid islands with greater thickness and higher modulus led to more confined buckling outside the rigid islands, we hence chose SiN x as our final structure due to its higher modulus.…”

Section: Resultsmentioning

confidence: 99%

A Hemispherical Image Sensor Array Fabricated with Organic Photomemory Transistors

et al. 2022

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Hemispherical image sensors simplify lens designs, reduce optical aberrations, and improve image resolution for compact wide‐field‐of‐view cameras. To achieve hemispherical image sensors, organic materials are promising candidates due to the following advantages: tunability of optoelectronic/spectral response and low‐temperature low‐cost processes. Here, a photolithographic process is developed to prepare a hemispherical image sensor array using organic thin film photomemory transistors with a density of 308 pixels per square centimeter. This design includes only one photomemory transistor as a single active pixel, in contrast to the conventional pixel architecture, consisting of select/readout/reset transistors and a photodiode. The organic photomemory transistor, comprising light‐sensitive organic semiconductor and charge‐trapping dielectric, is able to achieve a linear photoresponse (light intensity range, from 1 to 50 W m−2), along with a responsivity as high as 1.6 A W−1 (wavelength = 465 nm) for a dark current of 0.24 A m−2 (drain voltage = −1.5 V). These observed values represent the best responsivity for similar dark currents among all the reported hemispherical image sensor arrays to date. A transfer method was further developed that does not damage organic materials for hemispherical organic photomemory transistor arrays. These developed techniques are scalable and are amenable for other high‐resolution 3D organic semiconductor devices.

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“…In recent decades, silicon nitride (SiN x ) films have become the most appealing contender for interlayer dielectrics in very large scale integrated (VLSI) circuits 1. Owing to the strict requirements for the miniaturization of devices and increasing circuit complexity, SiN x films, which have higher dielectric constants and can be thicker in device fabrications, are considered to be more amenable than other compounds 2. Additionally, SiN x films have also become important functional materials for microelectronic and optoelectronic devices, for example, as antireflection layers for silicon solar cells, passivation layers, supporting layers, diffusion barriers, or dielectric materials 2…”

Section: Introductionmentioning

confidence: 99%

Synthesis, Characterization, and Thermal Properties of Chlorine‐Containing 1,1,2,2‐Tetraaminodisilanes and Their Potential as Chemical Vapor Deposition Precursors for Silicon Nitride Films

Chu

Miao

et al. 2015

Eur J Inorg Chem

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Three chlorine‐containing aminodisilanes of the type Cl(RR′N)2Si–Si(NRR′)2Cl (with R = alkyl and R′ = H or R) as potential chemical vapor deposition (CVD) precursors for silicon nitride (SiNx) films have been synthesized and characterized by X‐ray diffraction; 1H, 13C, and 29Si NMR spectroscopy; and elemental analysis. They were obtained in high yields by the reactions of hexachlorodisilane (Si2Cl6) with excess liquid amines in diethyl ether through a general single‐step procedure. Their thermal properties including stability, volatility, transport behavior, and vapor pressure were evaluated by thermogravimetric analysis (TGA) to confirm that they are suitable for the CVD procedure. The deposition of SiNx films was accomplished with a hot‐wall CVD reactor system, which preliminarily verified the suitability of these compounds as CVD precursors.

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A comparison of structures and properties of SiNx and SiOx films prepared by PECVD

Cited by 11 publications

References 31 publications

Intrinsic Mechanical Properties of Free-Standing SiN_x Thin Films Depending on PECVD Conditions for Controlling Residual Stress

Intrinsic Mechanical Properties of Free-Standing SiN_x Thin Films Depending on PECVD Conditions for Controlling Residual Stress

A Hemispherical Image Sensor Array Fabricated with Organic Photomemory Transistors

Synthesis, Characterization, and Thermal Properties of Chlorine‐Containing 1,1,2,2‐Tetraaminodisilanes and Their Potential as Chemical Vapor Deposition Precursors for Silicon Nitride Films

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A comparison of structures and properties of SiNx and SiOx films prepared by PECVD

Cited by 11 publications

References 31 publications

Intrinsic Mechanical Properties of Free-Standing SiNx Thin Films Depending on PECVD Conditions for Controlling Residual Stress

Intrinsic Mechanical Properties of Free-Standing SiNx Thin Films Depending on PECVD Conditions for Controlling Residual Stress

A Hemispherical Image Sensor Array Fabricated with Organic Photomemory Transistors

Synthesis, Characterization, and Thermal Properties of Chlorine‐Containing 1,1,2,2‐Tetraaminodisilanes and Their Potential as Chemical Vapor Deposition Precursors for Silicon Nitride Films

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Intrinsic Mechanical Properties of Free-Standing SiN_x Thin Films Depending on PECVD Conditions for Controlling Residual Stress

Intrinsic Mechanical Properties of Free-Standing SiN_x Thin Films Depending on PECVD Conditions for Controlling Residual Stress