A Comparison of Short-Channel Control in Planar Bulk and Fully Depleted Devices

Muralidhar, R.; Cai, Jin; Lauer, Isaac; Chan, K.; Kulkarni, P.; Kim, Young‐Hee; Ren, Zhibin; Park, Dae-Gyu; Oldiges, Phil; Shahidi, G.

doi:10.1109/led.2012.2192411

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Cited by 5 publications

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“…In case some of these problems pose insurmountable challenges, alternative 2D-fully-depleted technology has been demonstrated [13]. Furthermore, there is some work indicating 2D-plannar devices may be scaleable [24] with good variability control [25].…”

Section: Impact Implicationmentioning

confidence: 99%

From 2D-planar to 3D-non-planar device architecture: A scalable path forward?

Shahidi

2013

Proceedings of the IEEE 2013 Custom Integrated Circuits Conference

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The microelectronics industry is in the process of transitioning from 2D-planar devices to 3D-non-planar (FinFET). In this paper, a metric is developed to assess the impact of scaling and device performance on chip (circuit) power as it is migrated node-to-node. The impact of node migration is assessed at product level as it is moved from 32 nm (2D-planar) to 22 nm (3D-non-planar device). Some of the limitations of the existing 22 nm 3D-device is reviewed that may explain some of the short comings in the product performance. Going forward it is critical that in two areas the FinFET needs to be improved: Multi-V T implementation and move away from the tapered fin shape.

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Section: Impact Implicationmentioning

confidence: 99%