A comparison of impression and compression creep behavior of polycrystalline Sn

Park, C.; Xin, Long; Haberman, Shoshana; Ma, Shuo; Dutta, I.; Mahajan, Ravi; Jadhav, S. G.

doi:10.1007/s10853-006-0542-5

Cited by 33 publications

(17 citation statements)

References 18 publications

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“…[28][29][30] The Q value of 41 kJ/mol obtained for pure Sn is also within the range of Q = 34 to 50 kJ/mol obtained in previous creep studies on single and polycrystalline Sn over temperatures ranging from 293 K to 423 K, and this Q has been widely attributed to that for dislocation core diffusion in pure Sn. 22,24,29,[31][32][33] This suggests that as for the solders, under the conditions of the present study, the creep mechanism in pure polycrystalline Sn too is dislocation core-diffusion-controlled dislocation climb, albeit with a lower Q value than in the solders.…”

Section: Creep Behaviormentioning

confidence: 53%

“…For comparison, the creep behavior of bulk 99.99% pure polycrystalline Sn specimens (approximately 3 mm diameter, 3 mm tall cylinders, melted at 673 K and cooled at $15 K/s) was also determined. 22 The miniaturized impression creep apparatus utilized to conduct the tests is detailed in Ref. 11.…”

Section: Methodsmentioning

confidence: 99%

“…The pure Sn specimen shows a polycrystalline microstructure with an average grain size of about $20 lm, such that the quasi-spherical crept zone produced under the punch during impression creep, the diameter of which is roughly twice the punch size, contains about 100 grains. 22 Thus, although the pure Sn experiments were conducted on bulk specimens, they represent the true polycrystalline creep behavior of Sn.…”

Section: Methodsmentioning

confidence: 99%

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Effect of Ag and Cu Concentrations on the Creep Behavior of Sn-Based Solders

Chen

Dutta

2007

Journal of Elec Materi

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The creep behavior of Sn-1Ag-0.5Cu, Sn-2.5Ag-1Cu and Sn-4Ag-0.5Cu ball grid array (BGA) solder balls and 99.99% pure polycrystalline bulk Sn was studied using impression creep and related to the microstructure. Sn-Ag-Cu solders generally consist of primary dendrites/grains of b-Sn, and a eutectic microconstituent comprising fine Ag 3 Sn and Cu 6 Sn 5 particles in b phase. With increasing concentrations of Ag and Cu in the alloy, the proportion of the eutectic microconstituent in relation to the primary b phase increases. In pure Sn and Sn-1Ag-0.5Cu, the b grains form the continuous matrix, whereas in Sn-2.5Ag-1Cu and Sn-4Ag-0.5Cu, the eutectic microconstituent forms a continuous network around the b grains, which form isolated islands within the eutectic. The steady-state creep behavior of the alloys was dominated by the response of the continuous microstructural constituent (b-Sn or solid solution b for pure Sn and Sn-1Ag-0.5Cu, and the eutectic microconstituent for Sn-2.5Ag-0.5Cu and Sn-4Ag-0.5Cu). In general, the steady-state creep rate decreased with increasing alloy content, and in particular, the volume fraction of Ag 3 Sn and Cu 6 Sn 5 precipitates. The rate-limiting creep mechanism in all the materials investigated here was core diffusion controlled dislocation climb. However, subtle changes in the stress exponent n and activation energy Q were observed. Pure Sn shows n = 5, Q = 42 kJ/mol, Sn-1Ag-0.5Cu shows n = 5, Q = 61 kJ/mol, whereas both Sn-2.5Ag-1Cu and Sn-4Ag-0.5Cu show n = 6 and Q = 61 kJ/mol. Rationalizations for the observed changes of n and Q are provided, based on the influence of the microstructure and the solute concentrations.

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Section: Creep Behaviormentioning

confidence: 53%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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Effect of Ag and Cu Concentrations on the Creep Behavior of Sn-Based Solders

Chen

Dutta

2007

Journal of Elec Materi

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“…Park et al examined the impression creep of polycrystalline Sn. 56 The punch diameter was 100 lm and the average grain size was 20 lm to 30 lm. The apparent activation energy was 40 kJ/mol; the stress exponent was 5 (3 MPa to 20 MPa).…”

Section: Aspects Of Sn Deformation Pertinent To the Dynamic Recrystalmentioning

confidence: 99%

Dynamic Recrystallization (DRX) as the Mechanism for Sn Whisker Development. Part I: A Model

Vianco

Rejent

2009

J. Electron. Mater.

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A model is proposed that attributes whisker growth in metals and alloys to dynamic recrystallization (DRX) and, in particular, DRX at the material surface. Each step in the DRX process was correlated to the development of whiskers. The DRX model depends upon the details of the deformation process(es) responsible for new grain initiation and growth. The dependencies exhibited by DRX as a function of deformation strain rate, temperature, and microstructure correlate with the behaviors of whisker development. Anomalous or ultrafast diffusion mechanisms, either by themselves or associated with the deformation structures, provide the means of mass transport necessary to grow whiskers. In Part II of this study, the strain and rate kinetics data are determined for Sn. Parts I and II, together, provide a critical step towards developing a capability to predict the conditions that are likely to cause whisker growth in engineering applications.

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“…They observed that the impression creep of single-crystal tin followed a power-law relation with a stress exponent in the range of 3.7 to 5.0. Park et al 4 made a comparison between the impression creep and the compression creep of polycrystalline tin and obtained a stress exponent of 5 and an activation energy of 43 kJ/mol for the impression creep of tin. They concluded that the impression creep was compatible with the compression creep for their test conditions.…”

Section: Introductionmentioning

confidence: 99%

Effect of DC Current on the Creep Deformation of Tin

Chen

Yang

2010

Journal of Elec Materi

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Impression creep testing of tin was performed in the temperature range of 343 K to 398 K and under a punching stress of 12 MPa to 55 MPa. During the impression test at constant load, a direct electric current in the range of 0 A to 6 A flowed through the punch into the sample, introducing an electromechanical interaction. Steady-state creep was observed under the simultaneous action of the electric current and mechanical stress. The steady-state impression velocity increased with increasing temperature, punching stress, and electric current. A hyperbolic sine relation was used to describe the stress dependence of the steady-state impression velocity for impression creep of tin. The apparent activation energy decreased with increasing electric current.

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A comparison of impression and compression creep behavior of polycrystalline Sn

Cited by 33 publications

References 18 publications

Effect of Ag and Cu Concentrations on the Creep Behavior of Sn-Based Solders

Effect of Ag and Cu Concentrations on the Creep Behavior of Sn-Based Solders

Dynamic Recrystallization (DRX) as the Mechanism for Sn Whisker Development. Part I: A Model

Effect of DC Current on the Creep Deformation of Tin

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