A Comparison of Defects Between InAs Single Crystals Grown by LEC and VGF Methods

Shen, Guiying; Zhao, Yuchao; Sun, Jing; Liu, Jingming; Zhou, Dong; Xie, Hongwei; Wang, Fenghua; Yang, Jun

doi:10.1007/s11664-020-08073-2

Cited by 3 publications

References 19 publications

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Interband cascade infrared photodetectors based on Ga-free InAs/InAsSb superlattice absorbers

Bader

Rothmayr

Khan

et al. 2022

Applied Physics Letters

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We present an interband cascade infrared photodetector based on Ga-free type-II superlattice absorbers. Substituting the more standard InAs/GaSb superlattice for a Ga-free superlattice with InAs/InAsSb requires an inverted carrier extraction path. A hole-ladder in the electron-barrier, instead of an electron-ladder in the hole-barrier, is employed to achieve photovoltaic operation. At elevated temperatures, seven negative-differential-conductance (NDC) regions are observed that arise from electrons tunneling through the electron barriers of the seven cascade stages. The detector operates in the photovoltaic mode at room temperature with a cutoff wavelength of 8.5 μm. At the NDC regions, the device features responsivity peaks under laser illumination reaching 0.45 A/W at room temperature at [Formula: see text] = 5.27 μm. This exceeds its highest measured low-temperature value of 0.22 A/W at this wavelength by a factor of 2.

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Interband cascade infrared photodetectors based on Ga-free InAs/InAsSb superlattice absorbers

Bader

Rothmayr

Khan

et al. 2022

Applied Physics Letters

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6.1 Angstrom family based mid-infrared light emitters and detectors

Bader

Hartmann²,

Pfenning³

et al. 2022

Infrared Remote Sensing and Instrumentation XXX

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Determination of the criterion for the morphological classification of etching pits formed in InSb single crystals grown by the Czochralski method in the crystallographic direction [111] and doped with tellurium

Komarovsky,

Zhuravlev,

Molodtsova

et al. 2024

Zavod. lab., Diagn. mater.

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The method of selective etching is used to assess the structural imperfection (dislocation density) of single crystals in production conditions due to high informativity and rather low labor consumption. However, the interpretation of the data obtained may differ depending on the choice of the type of regulatory documentation. We present the results of determining the criterion of morphological classification of etch pits using digital image processing. InSb (111) single crystals grown by the Czochralski method and doped with tellurium were analyzed. It was found by the method of sequential selective etching that the island-shaped pits on the surface of InSb (111), are highly likely to be dislocation in nature, regardless of their size. In turn, the clusters of pits of «regular» shape, disappearing in the course of repeated etching, probably arise in the places where point defects come to the surface and are not associated with the formation of Lomer-Cottrell barriers or other dislocation clusters. A criterion for differentiation of etching pits by determining the value of the average pixel intensity is proposed on the basis of brightness field analysis. The results obtained can be used in manufacturing structures for matrix and linear photodetectors, as well as in optimizing process parameters of the single crystal growth by the Czochralski method.

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A Comparison of Defects Between InAs Single Crystals Grown by LEC and VGF Methods

Cited by 3 publications

References 19 publications

Interband cascade infrared photodetectors based on Ga-free InAs/InAsSb superlattice absorbers

Interband cascade infrared photodetectors based on Ga-free InAs/InAsSb superlattice absorbers

6.1 Angstrom family based mid-infrared light emitters and detectors

Determination of the criterion for the morphological classification of etching pits formed in InSb single crystals grown by the Czochralski method in the crystallographic direction [111] and doped with tellurium

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