A comparison among different setups for measuring on-wafer integrated inductors in RF applications

Aguilera, J.; Matias, G.; Nó, J. de; Garcia-Alonso, A.; Berenguer, Roc

doi:10.1109/tim.2002.1017719

Cited by 6 publications

(6 citation statements)

References 7 publications

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“…Daniel et al [12] have provided a deembedding methodology using a through-only structure. Aguilera et al [13] have compared different deembedding methodologies. Vandamme et al [14] have provided a deembedding methodology that takes into consideration the pad parasitics.…”

Section: Previous Workmentioning

confidence: 99%

SIS wide-band model extraction methodology for SOI on-chip inductor

Topaloglu

Goo

Loke

et al. 2010

2010 International Conference on Microelectronic Test Structures (ICMTS)

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On-chip inductors are recently in high demand even for digital applications due to strict jitter and phase noise requirements in oscillators. Accurate and fast modeling techniques are needed to enable low-cost and fast silicon turnaround. We present a fast and accurate methodology named scaled, iterative, and sampled (SIS) non-linear least squares optimization to extract wide-band model parameters suitable up to 20 GHz for inductor. To test our methodology, we implement a silicon-on-insulator (SOI) inductor in a 45 nm technology. The inductor is suitable for 8 to 20 GHz operation with 1.45 nH inductance and a quality factor of 17 at 10 GHz. We correlate our results to silicon measurements and achieve a very good fit between our models and silicon data. With our methodology, we achieve modelturnaround time of a few hours.

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Section: Previous Workmentioning

confidence: 99%

SIS wide-band model extraction methodology for SOI on-chip inductor

Topaloglu

Goo

Loke

et al. 2010

2010 International Conference on Microelectronic Test Structures (ICMTS)

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“…One of the key elements there, especially in the silicon radiofrequency (RF) integrated circuits field, is the design of high-quality passive elements including integrated inductors. Inductors are very important elements of resonant circuits (e.g., inductor-capacitor (LC) parallel tank circuit), which define the parameters and characteristics of such important RF blocks as low noise amplifiers (LNA), voltage controlled oscillators (VCO), RF filters, etc …”

Section: Introductionmentioning

confidence: 99%

“…In common, the performance of RF circuits depends on the Q-factor of the LC tank circuit. This is because inductors are characterized by significantly greater losses than capacitors and thus inductor quality determines the quality of the whole circuit . In general, inductor Q-factor is determined by the following relation Q = ω L R where ω is the angular current frequency, L is the inductance, and R is the resistance.…”

Section: Introductionmentioning

confidence: 99%

“…This is because inductors are characterized by significantly greater losses than capacitors and thus inductor quality determines the quality of the whole circuit . In general, inductor Q-factor is determined by the following relation Q = ω L R where ω is the angular current frequency, L is the inductance, and R is the resistance. According to this formula, the Q-factor of an inductor can be increased by increasing its inductance or by decreasing its resistance.…”

Section: Introductionmentioning

confidence: 99%

“…Currently, most of the inductors used in circuits as passive components have a microscopic size and are fabricated with a planar technology. ,− One of the main activities in this field is the design of thin film and multilayer inductors of RF high integration level circuits with a high Q-factor. The general approach here is the incorporation of magnetic composite thin film layers in the structure of passive elements, e.g.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Effect of Surface Functionalization of Metal Wire on Electrophysical Properties of Inductive Elements

et al. 2012

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The development of the microelectronics industry requires a new element basis with reduced size and increased functionality. The most important components in modern microelectronic integrated circuits are passive elements. One of the key challenges in order to improve the functionality of integrated circuits is to increase the quality of passive elements composing them. In this paper we suggest a novel approach to increase the quality factor Q of inductors by the surface modification and functionalization of the metal components. Ultrasound induced surface modification of metal wires led to the formation of a porous surface structure, which further can be functionalized with magnetite nanoparticles using layer-by-layer assembly technique. The surface modification and deposition of magnetite nanoparticles was investigated with SEM, XRD, and contact angle measurements. Additionally, inductance and resistance measurements, as the main parameters determining the Q-factor of inductors, were carried out. Samples with high number of magnetic nanoparticle-polyelectrolyte bilayers demonstrate a significant increase in inductance and a slight decrease in resistance in comparison to uncoated ones. The combination of these factors led to enhancement the Q-factor of the investigated inductive elements.

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Design of Low Power Monolithic DC-DC Buck Converter with Integrated Inductor

Musunuri

Chapman

IEEE 36th Conference on Power Electronics Specialists, 2005.

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A comparison among different setups for measuring on-wafer integrated inductors in RF applications

Cited by 6 publications

References 7 publications

SIS wide-band model extraction methodology for SOI on-chip inductor

SIS wide-band model extraction methodology for SOI on-chip inductor

Effect of Surface Functionalization of Metal Wire on Electrophysical Properties of Inductive Elements

Design of Low Power Monolithic DC-DC Buck Converter with Integrated Inductor

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