A comparative TCAD simulations of a P-and N-type organic field effect transistors: field-dependent mobility, bulk and interface traps models

Boubaker, Aïmen; Hafsi, B.; Lmimouni, K.; Kalboussi, Adel

doi:10.1007/s10854-017-6480-y

Cited by 14 publications

(10 citation statements)

References 19 publications

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“…Tetracene and pentacene are promising organic semiconducting p-type polyacenes, and their application in optoelectronic systems has been intensively studied. − Polyacene systems can be easily condensed into a crystalline structure, and the energy band gap from anthracene to tetracene and pentacene can evolve because of the delocalization of π-electrons. Tetracene-based field-effect transistors (FETs) exhibit light emission and ambipolar transport characteristics. , Electroluminescence from a tetracene-based light-emitting diode (LED) was observed near the drain electrode caused by the imbalance of electron and hole mobilities .…”

Section: Introductionmentioning

confidence: 99%

Hybrid Characteristics of MoS₂ Monolayer with Organic Semiconducting Tetracene and Application to Anti-Ambipolar Field Effect Transistor

Park

Kim

et al. 2018

ACS Appl. Mater. Interfaces

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An n-type MoS monolayer grown by chemical vapor deposition method was partially hybridized with an organic semiconducting p-type tetracene thin film. The photoluminescence (PL) intensity in the hybrid region of the MoS/tetracene is clearly lower than that of pristine tetracene because of the charge-transfer effect, which was confirmed by the decrease in exciton lifetimes. Decrease in the temperature led to blue-shift in the PL peak position of MoS layers and, consequently, the PL intensities of both tetracene and MoS considerably increased owing to the decrease in phonon interaction. The PL spectra of bound excitons in the hybrid region were clearly observed at low temperatures, indicating the formation of trap states. The lateral-type n-p heterojunction field-effect transistors (FETs) using the MoS/tetracene hybrid as an active layer showed gate-tunable rectification I- V and anti-ambipolar field-effect characteristics with hysteresis effect. The charge transport characteristics across the n-p heterojunction of the hybrid region of the FET can be explained in terms of the Shockley-Read-Hall trap-intermediated tunneling and Langevin recombination mechanisms. To improve the performance of MoS/tetracene-based FET, a dielectric hexagonal boron nitride (h-BN) thin layer was inserted between the SiO surface and the active MoS layer. We observed the decrease in the hysteresis effect and threshold voltage of the h-BN/MoS/tetracene-based FETs due to the decrease in the number of traps at the interface. The performance of h-BN/MoS/tetracene FET device was also enhanced after the annealing process.

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Section: Introductionmentioning

confidence: 99%

Hybrid Characteristics of MoS₂ Monolayer with Organic Semiconducting Tetracene and Application to Anti-Ambipolar Field Effect Transistor

Park

Kim

et al. 2018

ACS Appl. Mater. Interfaces

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“…The trapped charges consist of both donor-like and acceptor like states across the forbidden energy gap 31 . Then, the DOS for deep-level DLT is in the same manner of Gaussian distribution:…”

Section: Modelingmentioning

confidence: 99%

“…For the trapping process, the electron jumps from a neutral DLT site to an empty HOMO site. Here, we assume that all states of DLT are higher than HOMO, because Gaussian distributed DLT are deep-level bands 31 .…”

Section: Trapping Processmentioning

confidence: 99%

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Analytical Model for Gaussian Disorder Traps in Organic Thin-Film Transistor

Chen¹,

Sanchez²,

Lin³

et al. 2021

Preprint

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Structural defects and chemical impurities exist in organic semiconductors acting as trap centers for the excited states. This work presents a novel analytical model to calculate the trapping and detrapping rates between two Gaussian density of states. Miller-Abrahams rate and Fermi-Dirac statistics are employed in this model. The introduction of effective filled and empty sites for correlated bands greatly simplifies the expression of recombination rate. A technology computer-aided design simulator-DEVSIM was used to simulate the donor-like traps in an organic semiconductor DPP-DTT based thin-film transistor, showing good agreement with the measured transfer characteristic.

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“…As portrayed in figure 1, C60 Quantum structure embedded thin film layer of thickness 3nm is deposited on the p-Si substrate [20][21][22][23]. The source and drain are the n-type Si.…”

Section: Device Theory and Modellingmentioning

confidence: 99%

Study of Electron Transport in Fullerene (C60) Quantum Confined Channel Layer Based Field Effect Transistor

Chelliah¹,

Szymanik²,

Swaminathan³

2017

IJAERS

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In this work, we modelled a simple n-channel Si Metal-Quantum confined layer-Semiconductor Field Effect Transistor (MQSFET), which resembles exactly as the conventional Si Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) where SiO2 dielectric layer is replaced with a wide band gap C60 quantum confined layer of thickness 3nm and gold (Ψ=5.1eV) as metal contact. The capacitance and voltage characteristics at different temperatures from 100 K to 500 K and energy band gap are studied using Multi-dielectric Energy Band Diagram Program (MEBDP) simulation software, performed current-voltage transistor characteristics and analyzed the mobility of the charge carrier in the MQS sandwiched device structure using the Caughey-Thomas high saturation mobility model and the Lombardi surface mobility model. In these studies, we inferred a very low threshold voltage, when the donor concentration in the p-Si substrate is tuned between 1E16 to 1E17 cm -3 and a saturated flow of nanoamperes range of charge carrier at a low gate potential is even possible.

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A comparative TCAD simulations of a P-and N-type organic field effect transistors: field-dependent mobility, bulk and interface traps models

Cited by 14 publications

References 19 publications

Hybrid Characteristics of MoS₂ Monolayer with Organic Semiconducting Tetracene and Application to Anti-Ambipolar Field Effect Transistor

Hybrid Characteristics of MoS₂ Monolayer with Organic Semiconducting Tetracene and Application to Anti-Ambipolar Field Effect Transistor

Analytical Model for Gaussian Disorder Traps in Organic Thin-Film Transistor

Study of Electron Transport in Fullerene (C60) Quantum Confined Channel Layer Based Field Effect Transistor

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A comparative TCAD simulations of a P-and N-type organic field effect transistors: field-dependent mobility, bulk and interface traps models

Cited by 14 publications

References 19 publications

Hybrid Characteristics of MoS2 Monolayer with Organic Semiconducting Tetracene and Application to Anti-Ambipolar Field Effect Transistor

Hybrid Characteristics of MoS2 Monolayer with Organic Semiconducting Tetracene and Application to Anti-Ambipolar Field Effect Transistor

Analytical Model for Gaussian Disorder Traps in Organic Thin-Film Transistor

Study of Electron Transport in Fullerene (C60) Quantum Confined Channel Layer Based Field Effect Transistor

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Product

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Hybrid Characteristics of MoS₂ Monolayer with Organic Semiconducting Tetracene and Application to Anti-Ambipolar Field Effect Transistor

Hybrid Characteristics of MoS₂ Monolayer with Organic Semiconducting Tetracene and Application to Anti-Ambipolar Field Effect Transistor