A comparative study of wet etching and contacts on <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si1.gif" overflow="scroll"><mml:mrow><mml:mo>(</mml:mo><mml:mrow><mml:mover accent="true"><mml:mn>2</mml:mn><mml:mo>¯</mml:mo></mml:mover></mml:mrow><mml:mn>01</mml:mn><mml:mo>)</mml:mo></mml:mrow></mml:math> and (010) oriented β-Ga2O3

Jang, Soohwan; Jung, Sunghwan; Beers, Kimberly; Yang, Jiancheng; Ren, F.; Kuramata, Akito; Pearton, S. J.; Baik, Kwang Hyeon

doi:10.1016/j.jallcom.2017.09.336

Cited by 60 publications

(35 citation statements)

References 39 publications

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“…As highlighted with pink, the (

\overset{2}{true}

01) plane is especial in β‐Ga 2 O 3 because only O atoms or Ga atoms existing in this plane. [ 27 ] Figure 3b shows a (

\overset{2}{true}

01) plane terminated with O atoms only. These O atoms exhibit a hexagonal arrangement, similar to the O atoms in the (0001) plane of sapphire shown in Figure 3c.…”

Section: Resultsmentioning

confidence: 99%

Investigation of β‐Ga₂O₃ Film Growth Mechanism on c‐Plane Sapphire Substrate by Ozone Molecular Beam Epitaxy

Feng

Cheng

et al. 2020

Physica Status Solidi (a)

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Growth mechanism and temperature of monoclinic gallium oxide (β‐Ga2O3) films grown by ozone molecular beam epitaxy (MBE) are investigated herein. Phase‐pure (2true¯01) β‐Ga2O3 films can be grown on c‐plane sapphire substrates when the growth temperature exceeds 500 °C, and the grain size increases with the increase in the growth temperature. Sixfold rotational domains are obtained based on the epitaxial relationships (Ga2O3 < 010>//Al2O3<11true¯00> and Ga2O3 < 102>//Al2O3 < 11true2¯0>). For the film grown at 700 °C, the threefold facets are observed for the first time, which are resulted from the easy‐cleaved (100) plane and rotational domains. In addition, the cathodoluminescence spectra of the β‐Ga2O3 films show that the proportion of ultraviolet emission increases with the increase in the growth temperature, which is attributed to the modulation of defect. Finally, the growth rate can be modulated by the ratio of Ga flux and ozone pressure. A reference is provided for heteroepitaxy of β‐Ga2O3 films and better understanding of the ozone MBE growth mechanism of oxides.

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“…As highlighted with pink, the (

\overset{2}{true}

01) plane is especial in β‐Ga 2 O 3 because only O atoms or Ga atoms existing in this plane. [ 27 ] Figure 3b shows a (

\overset{2}{true}

01) plane terminated with O atoms only. These O atoms exhibit a hexagonal arrangement, similar to the O atoms in the (0001) plane of sapphire shown in Figure 3c.…”

Section: Resultsmentioning

confidence: 99%

Investigation of β‐Ga₂O₃ Film Growth Mechanism on c‐Plane Sapphire Substrate by Ozone Molecular Beam Epitaxy

Feng

Cheng

et al. 2020

Physica Status Solidi (a)

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“…Zhang et al investigated the anisotropic etching behavior of β-Ga 2 O 3 and showed that the wet etching in hot phosphoric acid could effectively reduce the sidewall roughness caused by plasma dry etching [18]. Jang et al found that ( 2 01) Ga 2 O 3 had higher etch rates and could form ohmic contacts more easily than (010) Ga 2 O 3 , which was correlated with the higher density of oxygen dangling bonds on the ( 2 01) plane [19]. Sasaki et al found that the epitaxial growth rate for (100) plane was lower than (010) plane because of the low adhesion energy on the terraces for (100) surface [20].…”

Section: Introductionmentioning

confidence: 99%

Control and understanding of metal contacts to β-Ga2O3 single crystals: a review

Kim

2021

SN Appl. Sci.

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Gallium oxide (Ga2O3) is a promising semiconductor for high power devices and solar blind ultraviolet photodetectors due to its large bandgap, a high breakdown field, and high thermal stability. Recently, a considerable achievement has been obtained for the growth of high-quality β-Ga2O3 and high performance β-Ga2O3 based devices. However, rapid advance in device performance can be limited by the critical issues of metal contacts to β-Ga2O3 such as barrier height, leakage current, ohmic contact, and surface, interfacial and deep states. This article aims to provide a review on the recent studies in the control and understanding of metal contacts to β-Ga2O3, particularly in terms of the barrier formation. This review suggests that understanding the current transport mechanisms of metal contacts to β-Ga2O3 more thoroughly is necessary to enhance the performance, stability and reliability of β-Ga2O3 based devices.

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“…The pattern transfer can be carried out by either wet etching or dry etching. There have been some reports on the wet etching of β-Ga 2 O 3 [19][20][21][22][23], but it is very difficult to produce [24,25]. Dry etching techniques utilizing a high density plasma source, such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR), have been shown to produce higher etch rates for GaN and SiC compared to conventional reactive ion etching (RIE) and chemically-assisted ion beam etching (CAIBE) [26][27][28][29][30].…”

Section: Introductionmentioning

confidence: 99%

Fluorine-based Inductively Coupled Plasma Etching of α-Ga2O3 Epitaxy Film

Um¹,

Choi²,

Jang³

et al. 2021

Korean J. Met. Mater.

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α-Ga2O3 has the largest bandgap (~5.3 eV) among the five polymorphs of Ga2O3 and is a promising candidate for high power electronic and optoelectronic devices. To fabricate various device structures, it is important to establish an effective dry etch process which can provide practical etch rate, smooth surface morphology and low ion-induced damage. Here, the etch characteristics of α-Ga2O3 epitaxy film were examined in two fluorine-based (CF4/Ar and SF6/Ar) inductively coupled plasmas. Under the same source power, rf chuck power and process pressure, an Ar-rich composition of CF4/Ar and an SF6-rich composition of SF6/Ar produced the highest etch rates. Monotonic increase in the etch rate was observed as the source power and rf chuck power increased in the 2CF4/13Ar discharges, and a maximum etch rate of ~855 Å/min was obtained at a 500 W source power, 250 W rf chuck power, and 2 mTorr pressure. A smooth surface morphology with normalized roughness of less than ~1.38 was achieved in the 2CF4/13Ar and 13SF6/2Ar discharges under most of the conditions examined. The features etched into the α-Ga2O3 layer using a 2CF4/13Ar discharge with 2 mTorr pressure showed good anisotropy with a vertical sidewall profile.

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A comparative study of wet etching and contacts on (2¯01) and (010) oriented β-Ga2O3

Cited by 60 publications

References 39 publications

Investigation of β‐Ga₂O₃ Film Growth Mechanism on c‐Plane Sapphire Substrate by Ozone Molecular Beam Epitaxy

Investigation of β‐Ga₂O₃ Film Growth Mechanism on c‐Plane Sapphire Substrate by Ozone Molecular Beam Epitaxy

Control and understanding of metal contacts to β-Ga2O3 single crystals: a review

Fluorine-based Inductively Coupled Plasma Etching of α-Ga2O3 Epitaxy Film

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A comparative study of wet etching and contacts on (2¯01) and (010) oriented β-Ga2O3

Cited by 60 publications

References 39 publications

Investigation of β‐Ga2O3 Film Growth Mechanism on c‐Plane Sapphire Substrate by Ozone Molecular Beam Epitaxy

Investigation of β‐Ga2O3 Film Growth Mechanism on c‐Plane Sapphire Substrate by Ozone Molecular Beam Epitaxy

Control and understanding of metal contacts to β-Ga2O3 single crystals: a review

Fluorine-based Inductively Coupled Plasma Etching of α-Ga2O3 Epitaxy Film

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Product

Resources

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Investigation of β‐Ga₂O₃ Film Growth Mechanism on c‐Plane Sapphire Substrate by Ozone Molecular Beam Epitaxy

Investigation of β‐Ga₂O₃ Film Growth Mechanism on c‐Plane Sapphire Substrate by Ozone Molecular Beam Epitaxy