A comparative study of the HF sorption and outgassing ability of different Entegris FOUP platforms and materials

González-Aguirre, Paola; Fontaine, Hervé; Beitia, C.; Ohlsen, Jim; Lundgren, Jorgen; Lee, Poshin

doi:10.1016/j.mee.2012.12.005

Cited by 17 publications

(14 citation statements)

References 7 publications

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“…However, FOUP is not without risks of being a source of contamination itself. Gonzales-Aguirre et al ( 2013) 42 demonstrated the effects of HF sorption on wafers using five types of commercial FOUP with different materials, namely ultrapure polycarbonate (FOUP A), PC with carbon powders (FOUP B), a commercial material (FOUP C), FOUP C material with carbon nanotubes as additives (FOUP D), and polyethylenimine with CNT (FOUP E). For the intentional contamination experiments, they postulated that outgassed molecules from the FOUP atmosphere would absorb on the polymer surface of a FOUP, then diffuse into the polymer driven by the concentration gradient.…”

Section: Minimization Of Amcsmentioning

confidence: 99%

Review—Airborne Molecular Contamination: Recent Developments in the Understanding and Minimization for Advanced Semiconductor Device Manufacturing

Den

Garza

et al. 2020

ECS J. Solid State Sci. Technol.

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This review paper focuses on the recent knowledge about airborne molecular contamination (AMC) and its impacts on 300-mm wafer fabrication processes. The adverse impacts on process materials by both organic and inorganic micro-contaminants, and evidence of cross-contamination between processed wafers and the mainstream wafer handling tools, are two areas of discussion for the study. The review also aims to re-frame the industrial guideline for AMC from chemical-based to risk-based approach, which substantiates the potential impacts of individual families of AMCs that have been well-documented. This approach resonates well with the new AMC classification method recently proposed by the International Roadmap of Devices and Systems (IRDS), building on new knowledge of AMC emerged over time with the advances of analytical and testing capability. The review also brings forth the impact of moisture, the mere presence of which can compromise the integrity of device structures. However, moisture is especially detrimental in the presence of other inorganic ions to trigger unwanted reactions with surface materials. Methods developed to minimize the micro-contaminants and moisture during wafer handling and storage are also reviewed.

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Section: Minimization Of Amcsmentioning

confidence: 99%

Review—Airborne Molecular Contamination: Recent Developments in the Understanding and Minimization for Advanced Semiconductor Device Manufacturing

Den

Garza

et al. 2020

ECS J. Solid State Sci. Technol.

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“…Thus the mathematical expression for transient contaminant transfer between the wafer and the internal part of the FOUP is given by the convection-diffusion equation (2). This equation traduced the conservation equation for the species and its can be written: (2) The contaminant transfer between the internal parts to the polymer (FOUP) is purely diffusive, and we have (3) Were here is the species.…”

Section: Model Settingsmentioning

confidence: 99%

“…Integrated circuits are manufactured from a monocristallin silicium plates (wafer) [1]. Minutiarization of the I.C is designed with the 45, 32, 22 [nm], in fact, the wafer's surface is very sensitive to molecular contaminations of the wafer are critical subjects which can potentially cause defect on the use and have impacts in the device performance [2], [3]. In this work, we keep more attention in molecular contamination that can damage and induce a significant impact in manufacturing yields.…”

Section: Introductionmentioning

confidence: 99%

Coupled system of PDEs to predict the sensitivity of some materials constituents of FOUP with the AMCs cross-contamination

Santatriniaina

Deseure²,

Nguyen³

et al. 2014

International Journal of Applied Mathematical Research

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This paper deals a predictive model using modeling and computational methods to investigate the sensitivity of some materials constituents of the FOUP with the AMCs cross contamination. Required numerical tools which are employed in order to study the AMCs cross-contamination transfer phenomena between wafers and FOUPs were developed. Numerical optimization and finite elements formulation in transient analysis were established. Analytical solution of one dimensional problem was developed and the calibration process of physical constants was performed. This mode was used to study the sensitivity of some material with the cross contamination. The behavior of the AMCs in transient analysis was determined. The model framework preserves the classical forms of the diffusion and convection-diffusion equations and yields to consistent form of the Fick's law. The adsorption kinetics of the contaminant on the surface (interface contaminant/polymer) was assumed. The adsorption process and the surface roughness effect were also traduced as a boundary condition using the switch condition Dirichlet to Neumann and the interface condition. Many tests of contamination processes were assumed in order to study the sensitivity of the materials. Optimization methods with analytical solution were used to define physical constants for each material versus contaminant. Finite element methods including adsorption kinetic were also used and by using Henry law on the interface and the switch of Dirichlet to Neumann conditions.

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“…In power electronics manufacturing, the wafer environment has a significant impact on the wafer yield. Wafer containers can capture AMCs outgassing from just-processed wafers or being transferred from the equipment minienvironment and release them afterwards, eventually damaging wafers sensitive to AMC compounds later on [1][2][3][4][5][6]. Different contamination profiles can be found in the FOUPs depending on the process steps passed by the wafers beforehand [7,8].…”

Section: Introductionmentioning

confidence: 99%

Experimental Wafer Carrier Contamination Analysis and Monitoring in Fully Automated 300 mm Power Production Lines

Zängle

Pfeffer

Franze

et al. 2021

SSP

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Contamination control is essential in semiconductor manufacturing to ensure high yield and product quality. Latest power electronic devices are manufactured in fully automated 300 mm production lines, which utilize closed wafer containers called Front Opening Unified Pods (FOUPs). It has been observed, that FOUPs capture airborne molecular contaminants (AMC) outgassing from processed wafers or being transferred from the equipment minienvironment. These AMC might be released afterwards and can lead to defects causing yield and/or reliability issues of the power devices. Specific FOUP cleaning and exchange rules are already being utilized in the fab. But so far, these rules are not validated or adapted by actual concentration values in the FOUPs. In this paper, contamination levels in FOUPs are investigated to identify the sources of different AMC. The contamination data is analysed together with FOUP logistics data in order to establish an optimized FOUP management strategy. In the first part, in-line carrier contamination control is explained and a general overview of the AMC detected is given. In the second part, the data-driven FOUP-monitoring is described using the example of the root cause analysis of hydrofluoric acid (HF) contamination.

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A comparative study of the HF sorption and outgassing ability of different Entegris FOUP platforms and materials

Cited by 17 publications

References 7 publications

Review—Airborne Molecular Contamination: Recent Developments in the Understanding and Minimization for Advanced Semiconductor Device Manufacturing

Review—Airborne Molecular Contamination: Recent Developments in the Understanding and Minimization for Advanced Semiconductor Device Manufacturing

Coupled system of PDEs to predict the sensitivity of some materials constituents of FOUP with the AMCs cross-contamination

Experimental Wafer Carrier Contamination Analysis and Monitoring in Fully Automated 300 mm Power Production Lines

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