A comparative study of CdS:F and CdS:O thin films deposited by reactive RF-sputtering technique for window layer application in solar cells

Hernández-Rodríguez, E.; Loeza-Poot, M.; Riech, I.; Rejón, V.; Peña, J. L.

doi:10.1088/0022-3727/48/25/255102

Cited by 19 publications

(8 citation statements)

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“…[41,42] Thus, the BE difference of 456.72 eV in the Al 2p peak located at 74.4 eV and O1s (531.4 eV) is consistent with the presenceo fA l ÀOb onds in the www.chemsuschem.org ence of the S 6 + and S 4 + species showedb yt he S2p 3/2 peaks at higher bindinge nergies (168-169 eV), we can confirmt he formation of as mall amount of CdSO 4 andC dSO 3 on the surface of CdS. [45,46] Thus, the lower peak intensity of Cd 3d and S2pi n the Al 2 O 3 -coated CdS/Zr:Fe 2 O 3 nanorod array heterojunction than in the uncoated CdS/Zr:Fe 2 O 3 nanorod arrays confirms the Al 2 O 3 layer is presento nt he surface of the CdS/Zr:Fe 2 O 3 nanorod array heterojunction.…”

Section: Resultssupporting

confidence: 82%

“…The Al 2p peak is located at 74.4 eV;h owever,t he asymmetric O1sp eak at 531.5 eV is relativelyb road and is associatedw ith different types of bonds. [45,46] Thus, the lower peak intensity of Cd 3d and S2pi n the Al 2 O 3 -coated CdS/Zr:Fe 2 O 3 nanorod array heterojunction than in the uncoated CdS/Zr:Fe 2 O 3 nanorod arrays confirms the Al 2 O 3 layer is presento nt he surface of the CdS/Zr:Fe 2 O 3 nanorod array heterojunction. [41,42] Thus, the BE difference of 456.72 eV in the Al 2p peak located at 74.4 eV and O1s (531.4 eV) is consistent with the presenceo fA l ÀOb onds in the Al 2 O 3 .…”

Section: Resultsmentioning

confidence: 99%

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CdS/Zr:Fe₂O₃ Nanorod Arrays with Al₂O₃ Passivation Layer for Photoelectrochemical Solar Hydrogen Generation

et al. 2017

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CdS-sensitized 1 D Zr:Fe O nanorod arrays were synthesized on fluorine-doped tin oxide substrates by a two-step hydrothermal method. The photoelectrochemical results demonstrate that the current density (4.2 mA cm at 0 V vs. Ag/AgCl) recorded under illumination for the CdS/1 D Zr:Fe O photoanodes is 2.8 time higher than the bare 1 D Zr:Fe O . The extended absorbance spectrum, the reduced recombination, and the effective transport of photogenerated holes in CdS to the electrolyte facilitate enhancement in the photoelectrochemical performance. From X-ray photoelectron spectroscopy and TEM observations of the bare and aluminum oxide-treated CdS/1 D Zr:Fe O photoanodes, we could confirm that the 1 D Zr:Fe O nanorods were covered by the CdS layer and Al O layer present on surface of CdS. Furthermore, the photocurrent and stability of the CdS/1 D Zr:Fe O nanorods was significantly enhanced by Al O compared to bare CdS/1 D Zr:Fe O heterojunction owing to its ability to act as an effective holetransport- as well as photocorrosion-protecting layer. These remarkable enhancements in light-energy harvesting, improvement in charge transport, and stability directly suggest the usefulness of photoanodes for solar hydrogen generation.

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Section: Resultssupporting

confidence: 82%

Section: Resultsmentioning

confidence: 99%

CdS/Zr:Fe₂O₃ Nanorod Arrays with Al₂O₃ Passivation Layer for Photoelectrochemical Solar Hydrogen Generation

et al. 2017

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“…As shown in Figure 8 B, S 2p doublets appear at the binding energies of 161.76 eV (2p 3/2 ) and 162.93 eV (2p 1/2 ), where the dominant 2p 3/2 line agrees well with most of the sulfides, such as Cu x S (161.7 eV; Larson, 1974 ) and SnS x (161.7 eV; Cruz et al., 2003 ), indicating S 2– in the precursor. Besides, we do not observe any XPS peak at the higher binding energy from 172 to 167 eV coming from the oxidized sulfur (S 4+ or S 6+ ) ( Hernández-Rodríguez et al., 2015 , Meysing et al., 2015 , Thomas et al., 1997 ), suggesting that no (SO 3 ) 2– , (SO 4 ) 2– , or (S 2 O 3 ) 2– species is present in the precursor. The high-resolution C 1s spectrum in Figure 8 C shows three visible peaks at the binding energies of 284.63, 286.63, and 288.76 eV, which can be assigned to C–C, C–O, and O–C=O bonds from the tartrate and citrate species, respectively ( Cano et al., 2001 ).…”

Section: Resultsmentioning

confidence: 72%

Controllable Multinary Alloy Electrodeposition for Thin-Film Solar Cell Fabrication: A Case Study of Kesterite Cu2ZnSnS4

Yan

2018

iScience

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SummaryElectrodeposition (ED) technology is a low-cost industrial candidate for solar cell fabrication. However, the practical aspects of controlling deposit morphology and composition have not been significantly addressed because of the complex co-plating variables that still need to be understood for multinary alloy ED. This work addresses these practical aspects on how to control composition and deposit morphology using co-electrodeposited kesterite alloy precursors as a case study. The alloy precursors co-plated under the optimized conditions from a mixed thiosulfate-sulfite electrolyte bath show uniform, smooth, and compact film morphology as well as uniform distribution of composition, well suited for efficient kesterite absorbers, finally delivering a Cu2ZnSnS4 (CZTS) thin-film solar cell with 7.4% efficiency based on a configuration Mo/CZTS/CdS/ZnO/aluminum-doped ZnO. This work underscores that alloy ED, with the advantage of controllable composition and morphology, holds promise for low-cost industrial manufacture of thin-film solar cells.

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“…In the case of the CdS NR/CdSe-TDH-4h heterojunction photoanodes, peaks of Cd 3d and S 2p present at 404.87 and 161.18 eV, respectively, were found and are attributed to the Cd 2+ and S 2– species, respectively, in CdS/CdSO 3 . Furthermore, the presence of S 2p 3/2 peaks at higher BEs (168–169 eV) can be attributed to the S 4+ and S 6+ species and confirm the formation of a small amount of CdSO 4 and CdSO 3 on the surface of CdS NR/CdSe-TDH-4h heterojunction photoanodes. − This indicates that after the second hydrothermal, the CdSe-TDH-4h heterojunction nanostructure photoanode sample is transformed into CdS NR’s/CdSe-TDH, CdSO 4 , and CdSO 3 . Figure shows the raw resonance Raman spectra of the CdSe(en) 0.5 hybrid and CdS NR/CdSe-TDH-4h heterojunction photoanodes at an excitation wavelength of 532 nm.…”

Section: Resultsmentioning

confidence: 76%

Efficient Way To Assemble CdS Nanorose-Decorated CdSe-Tetrakaidecahedron Heterojunction Photoanodes for High-Photoelectrochemical Performance

Mahadik

Chung

Ryu

et al. 2019

ACS Sustainable Chem. Eng.

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The 3D structure assembly of CdSe tetrakaidecahedron (TDH) modified with the oxygenated CdS nanorose (NR) structure plays a crucial role in the photoelectrochemical (PEC) performance because of its advanced morphological, intrinsic optical, and electronic properties. The CdS NR-decorated CdSe-TDH nanostructure is demonstrated on cadmium substrates for the first time, exhibiting a greatly enhanced photocurrent density than the CdSe-TDH nanostructure. A CdSe-TDH photoanode solvothermally synthesized at 160 °C showed excellent PEC performance (2.78 mA•cm −2 ) under 1 sun illumination. In addition, the photocorrosion of CdSe-TDH photoanodes was systematically investigated, and PEC stability has been improved owing to the formation of nanobuilding blocks between the CdSe-TDH and the CdS NR structures. A set of CdS NR-decorated CdSe-TDH heterojunction at different hydrothermal times was examined and was found to be sensitive to the morphology. X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy analyses of the CdS NR/ CdSe-TDH-4h heterojunction photoanodes confirm the formation of the CdSO 3 layer on CdS NR/CdSe-TDH-4h. In this study, CdS NR/CdSe-TDH-4h heterojunction exhibits the optimal photocurrent density of 4.2 mA•cm −2 , and it is attributed to a quantum size effect and formation of the porous structure caused by the slow elimination of ethylenediamine (en) during the PEC measurement under solar light irradiation. Furthermore, the charge transport mechanism in CdSO 3 /CdS NR/CdSe-TDH-4h heterojunction photoanodes has been discussed. We believe that this shape-control strategy provides guidance to overcome the hole-transfer limitation and offers a new opportunity for designing a new type of nanostructure photoanodes which can be applied to photovoltaic devices.

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A comparative study of CdS:F and CdS:O thin films deposited by reactive RF-sputtering technique for window layer application in solar cells

Cited by 19 publications

References 19 publications

CdS/Zr:Fe₂O₃ Nanorod Arrays with Al₂O₃ Passivation Layer for Photoelectrochemical Solar Hydrogen Generation

CdS/Zr:Fe₂O₃ Nanorod Arrays with Al₂O₃ Passivation Layer for Photoelectrochemical Solar Hydrogen Generation

Controllable Multinary Alloy Electrodeposition for Thin-Film Solar Cell Fabrication: A Case Study of Kesterite Cu2ZnSnS4

Efficient Way To Assemble CdS Nanorose-Decorated CdSe-Tetrakaidecahedron Heterojunction Photoanodes for High-Photoelectrochemical Performance

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A comparative study of CdS:F and CdS:O thin films deposited by reactive RF-sputtering technique for window layer application in solar cells

Cited by 19 publications

References 19 publications

CdS/Zr:Fe2O3 Nanorod Arrays with Al2O3 Passivation Layer for Photoelectrochemical Solar Hydrogen Generation

CdS/Zr:Fe2O3 Nanorod Arrays with Al2O3 Passivation Layer for Photoelectrochemical Solar Hydrogen Generation

Controllable Multinary Alloy Electrodeposition for Thin-Film Solar Cell Fabrication: A Case Study of Kesterite Cu2ZnSnS4

Efficient Way To Assemble CdS Nanorose-Decorated CdSe-Tetrakaidecahedron Heterojunction Photoanodes for High-Photoelectrochemical Performance

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CdS/Zr:Fe₂O₃ Nanorod Arrays with Al₂O₃ Passivation Layer for Photoelectrochemical Solar Hydrogen Generation

CdS/Zr:Fe₂O₃ Nanorod Arrays with Al₂O₃ Passivation Layer for Photoelectrochemical Solar Hydrogen Generation