A Comparative Evaluation of SiC Power Devices for High-Performance Domestic Induction Heating

Sarnago, Héctor; Lucía, Óscar; Burdío, J.M.

doi:10.1109/tie.2015.2405057

Cited by 45 publications

(19 citation statements)

References 43 publications

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“…It is now evident that the existence of this gate channel creates reliability challenges [1] especially at higher temperatures [2]. This worsens when silicon carbide (4H-SiC) is used to fabricate the devices [3]. BJTs inherently do not have gate oxide and therefore do not suffer from the oxide reliability issues or reduced channel mobility due to lower carrier concentrations in the cannel [4].…”

Section: Introductionmentioning

confidence: 99%

The Impact of Temperature and Switching Rate on Dynamic Transients of High-Voltage Silicon and 4H-SiC NPN BJTs: A Technology Evaluation

Jahdi

Hedayati

Stark

et al. 2020

IEEE Trans. Ind. Electron.

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This paper reports the application of silicon BJT modelling techniques to the modelling of dynamic behaviour of high-voltage 4H-SiC BJTs, and the experimental validation thereof. High voltage silicon BJTs are impractical due to their low current gain which requires a bulky base driver. Emergence of high voltage 4H-SiC vertical NPN BJTs with a tenfold higher gain enables the application of efficient drivers, with ratings close to those of IGBTs. This paper demonstrates the advantages offered by 4H-SiC BJTs by means of wide-scale measurements at 800 V and 10 A in a range of temperatures up to 175 • C and adjusted base driver switching rates. The paper shows that the turn-off storage delay in the SiC BJT is two orders of magnitude lower than that of the silicon device. It also shows that the turn-on switching transients of SiC device are by an order of magnitude and the turn-off transients are by two orders of magnitude faster than that of its silicon counterpart, resulting in a tenfold reduction of the switching energy. It also demonstrates the temperaturedependency of switching transients of the silicon BJT, and the relative temperature-invariance of the SiC device's performance. The paper concludes with validation of the transient models for the 4H-SiC NPN BJT, showing that the model is sufficiently accurate for transient switching and loss calculations.

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Section: Introductionmentioning

confidence: 99%

The Impact of Temperature and Switching Rate on Dynamic Transients of High-Voltage Silicon and 4H-SiC NPN BJTs: A Technology Evaluation

Jahdi

Hedayati

Stark

et al. 2020

IEEE Trans. Ind. Electron.

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“…The aim of this paper is to provide a versatile large-signal high-frequency arbitrary waveform generator taking advantage of the new wide bandgap (WBG) devices [19][20][21][22] and a multi-level topology [23][24][25]. Multi-level converters have been studied and applied in the past to related applications such as pulsed electric fields for water disinfection [26][27][28][29][30], among others.…”

Section: Introductionmentioning

confidence: 99%

GaN-Based Versatile Waveform Generator for Biomedical Applications of Electroporation

et al. 2020

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Biomedical applications often require high-performance power supplies for diagnosis and treatment systems. In particular, modern electroporation techniques for cancer treatment require highvoltage generators with versatile waveform generation. In this context, sinusoidal waveform generation has been recently identified as beneficial for electrochemotherapy cancer treatments. This paper proposes the design of a high-voltage high-frequency arbitrary waveform generator taking advantage of Gallium Nitride (GaN) devices. The proposed converter has been designed and implemented, achieving a 1-MHz 2000-V output voltage. It has been electrically tested and applied to electrochemotherapy treatments in mice, demonstrating the feasibility of this proposal. INDEX TERMS Electroporation, magnetic components, arbitrary waveform generators, capacitors, wide bandgap semiconductor.

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“…In this regard, the power device should be able to work at high frequency with low total losses and work in higher temperature. Nowadays, studies have shown the advantages of wide band-gap power devices in comparison with silicon devices [1]- [3]. The new progress in power devices technology establishes that silicon carbide (SiC) technology, and Gallium Nitride (GaN), are the solutions for the needs faced by power converters nowadays [4].…”

Section: Introductionmentioning

confidence: 99%

A Novel Active Gate Driver for Improving SiC MOSFET Switching Trajectory

Camacho

Sala

Ghorbani

et al. 2017

IEEE Trans. Ind. Electron.

160

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The trend in power electronic applications is to reach higher power density and higher efficiency. Currently, the wide band-gap devices such as Silicon Carbide MOSFET (SiC MOSFET) are of great interest because they can work at higher switching frequency with low losses. The increase of the switching speed in power devices leads to high power density systems. However, this can generate problems such as overshoots, oscillations, additional losses and electromagnetic interference (EMI). In this paper, a novel active gate driver (AGD) for improving the SiC MOSFET switching trajectory with high performance is presented. The AGD is an open-loop control system and its principle is based on gate energy decrease with a gate resistance increment during the Miller Plateau effect on gatesource voltage. The proposed AGD has been designed and validated through experimental tests for high-frequency operation. Moreover, an EMI discussion and a performance analysis were realized for the AGD. The results show that the AGD can reduce the overshoots, oscillations and losses without compromising the EMI. Besides, the AGD can control the turn-on and turn-off transitions separately and it is suitable for working with asymmetrical supplies required by SiC MOSFETs.

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A Comparative Evaluation of SiC Power Devices for High-Performance Domestic Induction Heating

Cited by 45 publications

References 43 publications

The Impact of Temperature and Switching Rate on Dynamic Transients of High-Voltage Silicon and 4H-SiC NPN BJTs: A Technology Evaluation

The Impact of Temperature and Switching Rate on Dynamic Transients of High-Voltage Silicon and 4H-SiC NPN BJTs: A Technology Evaluation

GaN-Based Versatile Waveform Generator for Biomedical Applications of Electroporation

A Novel Active Gate Driver for Improving SiC MOSFET Switching Trajectory

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