A Compact Physical AlGaN/GaN HFET Model

Hou, Dong; Bilbro, Griff L.; Trew, R.J.

doi:10.1109/ted.2012.2227323

Cited by 19 publications

(5 citation statements)

References 19 publications

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“…This depletion width is constituted by two parts, ΔL 1 and ΔL 2 , where ΔL 1 denotes the depletion width under the gate and ΔL 2 denotes the depletion width at DAR. This phenomenon has been reported in References 18,19 and was illustrated in Figure 3 in this article. The relationship between ΔL and V ds is formulated as Equations (1), (2), and (3) in the chapter 7 in Reference 20 (Note that the inverse sin h function in Reference 20 has been equivalently converted to the logarithmic function in Equation 2).…”

Section: Analysis and Simplificationsupporting

confidence: 85%

A simplification method for capacitance models in AlGaN / GaN high electron mobility transistors under large drain voltage using channel analysis

Luo

Zhang

et al. 2020

Int J RF Microw Comput Aided Eng

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This article analyzes the bias dependence of gate-drain capacitance (C gd) and gate-source capacitance (C gs) in the AlGaN/GaN high electron mobility transistors under a high drain-to-source voltage (V ds) from the perspective of channel shape variation, and further simplifies C gd and C gs to be gate-to-source voltage (V gs) dependent only at high V ds. This method can significantly reduce the number of parameters to be fitted in C gd and C gs and therefore lower the difficulty of model development. The Angelov capacitance models are chosen for verifying the effectiveness of simplification. Good agreement between simulated and measured small-signal S-parameters, large-signal power sweep, and power contours comprehensively proves the accuracy of this simplification method.

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Section: Analysis and Simplificationsupporting

confidence: 85%

A simplification method for capacitance models in AlGaN / GaN high electron mobility transistors under large drain voltage using channel analysis

Luo

Zhang

et al. 2020

Int J RF Microw Comput Aided Eng

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“…Although high accuracy can be achieved, the empirical model contains dozens of fitting parameters and hardly demonstrates the unique operation mechanism of this transistor. Recently, physics-based transistor models such as the surface potential (SP)-based [12], [13], charge-based [14], and zone division (ZD)-based models [15], [16] have been highly attractive. They have shown the advantages of much fewer empirical parameters and links to the transistor's mechanisms.…”

Section: Introductionmentioning

confidence: 99%

A Large-Signal Model for Two-Dimensional Hole Gas Diamond MOSFET Based on the QPZD

Zhou

et al. 2019

IEEE Access

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A compact large-signal model for hydrogen-terminated (C-H) diamond metal-oxide field effect transistors (MOSFETs) is presented based on an improved quasi-physical zone division (QPZD) model. Unlike the conventional QPZD model for the AlGaN/GaN high-electron-mobility transistors (HEMTs), the linear-mode current-voltage (I-V) model of the diamond FET is analytically deduced with an improved velocity-electric field relation and temperature-dependent effective hole mobility µ eff (T). The I-V model can directly demonstrate the relation between the negative V ds and the negative I ds of the p-type diamond FETs, which cannot be achieved by the conventional QPZD model. Finally, the proposed model has been verified by the on-wafer measurements of an in-house 2 × 500 µm diamond FET. The good consistency shows that the presented compact large-signal model can accurately predict the DC I-V, multibias scattering-parameters (S-parameters), and large-signal performances. The results of this paper will be useful for the microwave diamond-based transistor and circuit designs. INDEX TERMS Diamond MOSFET, zone division, thermal resistance, current-voltage model, large-signal model.

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“…Previously, we reported [1]- [3] that the AlGaN/GaN HFET can be physically modeled by dividing the electron path from source to drain into five contiguous zones, which are defined to simplify the I -V characteristic of each, in accord with Technology Computer Aided Design (TCAD) simulations. The boundaries between pairs of adjacent zones are modeled as abrupt.…”

Section: Introductionmentioning

confidence: 99%

“…This zone-based analysis of FET devices was introduced by Khatibzadeh and Trew [4], who applied it to A1GaAs/GaAs MESFETs. [3]. The origin x = 0 is at the left-most edge v = V s = 0 of the source access region.…”

Section: Introductionmentioning

confidence: 99%

A Five-Parameter Model of the AlGaN/GaN HFET

Bilbro

Trew

2015

IEEE Trans. Electron Devices

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We introduce an analytic expression for the drain current I d (V gs , V ds ) of an AlGaN/GaN heterojunction field-effect transistor (HFET) as a function of its gate and drain voltages. We derive the function from a compact physical model of conduction current in the HFET. The proposed expression for the current is configured by five parameters, which can be expressed in terms of the geometry and materials of a device. We extend the model to small-signal RF operation by embedding it in a 12-parameter RLC network that represents terminal feed impedances and device parasitics. We adjust the parameters of the extended model to simultaneously fit dc and RF measurements of an industrial transistor.

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A Compact Physical AlGaN/GaN HFET Model

Cited by 19 publications

References 19 publications

A simplification method for capacitance models in AlGaN / GaN high electron mobility transistors under large drain voltage using channel analysis

A simplification method for capacitance models in AlGaN / GaN high electron mobility transistors under large drain voltage using channel analysis

A Large-Signal Model for Two-Dimensional Hole Gas Diamond MOSFET Based on the QPZD

A Five-Parameter Model of the AlGaN/GaN HFET

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