A Compact Model for Organic Field-Effect Transistors With Improved Output Asymptotic Behaviors

Abstract

International audienceHere, we propose an advanced compact analytical current-voltage model for organic field-effect transistors (OFETs), which can be incorporated into SPICE-type circuit simulators. We improved the output saturation behavior by introducing a new asymptotic function that also enables more precise low-voltage current and conductance fitting. A new expression for the subthreshold current was suggested to cover all operation regimes of OFETs. All model parameters were extracted by a systematic method, and the comparison of the modeled current with the experimental data on pentacene-based OFETs confirmed the validity of the model over a wide operation range

The 2021 flexible and printed electronics roadmap

“…Iñiguez et al showed that an accurate OTFT compact model was able to be obtained by assuming only one exponential DOS with the variable range hopping theory and assumption of no free carriers [127]. The model has a similar formulation as the RPI one and allows to apply direct methods for parameter extraction, which is called a unified modelling and extraction method [128]. Bonnassieux and Horowitz et al implemented a more physical approach for OTFT compact modelling with Gaussian distribution of DOS for amorphous OSC and a power law for mobility and contact résistance [129].…”

Fundamental insights into the threshold characteristics of organic field-effect transistors

“…In addition, results of physical modelling can be used to improve the accuracy of compact models, which consist of simple mathematical descriptions of device behaviour needed for the simulation of integrated OFET circuits [12,13]. The rigorousness of compact modelling strongly relies on the input parameters such as the charge carrier mobility μ, contact resistance R c , and threshold voltage V T , which have usually been considered as constant fitting parameters [12][13][14][15]. Among them, V T is particularly important for OFETs because of the following reasons.…”

Optoelectronic Modulation of Silver Antimony Sulfide Thin Films for Photodetection

“…Conventionally, there are mainly two operational mechanisms of phototransistors, that is, photoconduction and photogating. Figure S5 schematically illustrates these two working modes, which were simulated with a compact model of n-type phototransistors. , For the photoconduction mode, the light intensity mainly affects the photoconductivity of the channel and modulates the off-state current, working more or less like a photoconductor without a gate. On the contrary, the light intensity mainly controls the threshold voltage in the photogating mode, and the incident light works as a virtual gate.…”