Fundamental insights into the threshold characteristics of organic field-effect transistors

Jung, Sungyeop; Kim, Chang‐Hyun; Bonnassieux, Yvan; Horowitz, Gilles

doi:10.1088/0022-3727/48/3/035106

Cited by 27 publications

(23 citation statements)

References 32 publications

(35 reference statements)

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“…As will be shown later, the metal-insulator-metal model is completely valid for ORDs with GDOS as long as the effective injection barrier height is higher than about 0.2 eV. This recalls the same behaviour of M/O junctions in organic diodes and field-effect transistors in which organic semiconductor was assumed perfectly crystalline [35,40].…”

Section: Potential Distributionsupporting

confidence: 54%

Injection barrier at metal/organic semiconductor junctions with a Gaussian density-of-states

Jung

Kim

Bonnassieux

et al. 2015

J. Phys. D: Appl. Phys.

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We physically model the injection characteristics at the metal/organic semiconductor (M/O) junctions with a Gaussian density-of-states (GDOS). By both analytical and numerical modelling, the charge carrier concentrations at the M/O junctions in an organic rectifying diode (ORD) are calculated. The results demonstrate a special attention required in the application of the Schottky-Mott rule, which defines the injection barrier (IB) for ideal metal/ semiconductor junctions, to M/O junctions. By systematically changing the width of the GDOS that describes the energetic disorder in the organic semiconductor, we show that the edge of the highest-occupied molecular orbitals (HOMO) should be defined as σ k T /2 2 B higher rather than σ 2 from the maximum of the HOMO to keep the consistency of the Schottky-Mott rule. A simple analytical expression for the IB is presented which contains the effect of the disorder in facilitating the charge carrier injection. Simulated current density-voltage characteristics of the ORDs are also presented to support the arguments.

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Section: Potential Distributionsupporting

confidence: 54%

Injection barrier at metal/organic semiconductor junctions with a Gaussian density-of-states

Jung

Kim

Bonnassieux

et al. 2015

J. Phys. D: Appl. Phys.

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“…As a result, by adjusting the proportions of these compounds continuous tuning of the transistor threshold voltage is possible. Intriguingly, since most OFETs operate only in accumulation mode, V TH should be in principle zero [38].…”

Section: Resultsmentioning

confidence: 99%

1 Volt organic transistors with mixed self-assembled monolayer/Al2O3 gate dielectrics

Urasinska‐Wojcik¹,

Cocherel²,

Wilson³

et al. 2015

Organic Electronics

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“…Typical values for σ DOS can be on the order of 0.25 eV, a not‐inconsequential fraction of the ideal Schottky barrier for a typical metal–organic semiconductor interface. Using PES measurements of the HOMO and LUMO levels, Jung et al observed that the σ DOS creates an effective HOMO (LUMO) level that is located within the bandgap, at higher (lower) levels than the peak of the HOMO (LUMO) distribution . According to Equations and , φ B is then decreased when compared to calculations using values of EA obtained from the HOMO peak according to the offset values for EA and IE due to the spread of energy levels into the gap.…”

Section: Charge Injection Through a Metal–semiconductor Interfacementioning

confidence: 99%

Contact Resistance in Organic Field‐Effect Transistors: Conquering the Barrier

Waldrip

Jurchescu

Gundlach

et al. 2019

Adv Funct Materials

226

261

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Organic semiconductors have sparked interest as flexible, solution processable, and chemically tunable electronic materials. Improvements in charge carrier mobility put organic semiconductors in a competitive position for incorporation in a variety of (opto-)electronic applications. One example is the organic field-effect transistor (OFET), which is the fundamental building block of many applications based on organic semiconductors. While the semiconductor performance improvements opened up the possibilities for applying organic materials as active components in fast switching electrical devices, the ability to make good electrical contact hinders further development of deployable electronics. Additionally, inefficient contacts represent serious bottlenecks in identifying new electronic materials by inhibiting access to their intrinsic properties or providing misleading information. Recent work focused on the relationships of contact resistance with device architecture, applied voltage, metal and dielectric interfaces, has led to a steady reduction in contact resistance in OFETs. While impressive progress was made, contact resistance is still above the limits necessary to drive devices at the speed required for many active electronic components. Here, the origins of contact resistance and recent improvement in organic transistors are presented, with emphasis on the electric field and geometric considerations of charge injection in OFETs.semiconductors with superior intrinsic charge transport properties, there is a stringent need to improve the device properties in order to allow organic devices to fulfill their technological prospectives. In the organic semiconductor community, contact resistance (R C ) has come under increased scrutiny as it is apparent that the final device performance is often domi nated by carrier injection, rather than the transport through the semiconductor layer. Contact resistance can impact OFET development in multiple ways. First, if not accounted for, a high contact resistance may lead to inaccurate extraction of the device parameters. Second, any inaccuracies in parameter extraction can have significant consequences on material development, from generating incorrect structure-property relationships to discarding organic semiconductors whose efficient intrinsic electrical properties have been masked by inefficient contacts. Beyond OFET and semiconductor characterization, analog, low power, and high frequency applications require a greater level of device parameter control than has been obtained in typical DC, high-voltage OFETs. For analog applications, e.g., integration of conditioning circuits such as local sense amps for distributed flexible sensor arrays, nonlinearity of the transistor response inhibits proper functioning and limits applicability of common models used to design circuitry. Low power device development for novel materials are hindered by the high voltage turn-on and current suppression in devices with large R C . Considering high-frequency applications, Klauk suggest...

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Fundamental insights into the threshold characteristics of organic field-effect transistors

Cited by 27 publications

References 32 publications

Injection barrier at metal/organic semiconductor junctions with a Gaussian density-of-states

Injection barrier at metal/organic semiconductor junctions with a Gaussian density-of-states

1 Volt organic transistors with mixed self-assembled monolayer/Al2O3 gate dielectrics

Contact Resistance in Organic Field‐Effect Transistors: Conquering the Barrier

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