A compact model and direct parameters extraction techniques For amorphous gallium-indium-zinc-oxide thin film transistors

Moldovan, Oana; Castro-Carranza, A.; Cerdeira, A.; Estrada, M.; Barquinha, Pedro; Martins, Rodrigo; Fortunato, Elvira; Miljakovic, Slobodan; Iñı́guez, Benjamı́n

doi:10.1016/j.sse.2016.09.011

Cited by 24 publications

(15 citation statements)

References 26 publications

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“…The V Dsat and V DSe terms in (1) represent the saturation voltage and the transition from the linear to the saturation region and are defined respectively by [9]…”

Section: Model Descriptionmentioning

confidence: 99%

“…The parameters V T , V aa , and γ a are extracted from the linear I-V transfer characteristics experimental data while α s , and λ and m are obtained from the saturation transfer and output I-V measurement data respectively as per the procedures discussed in [9].…”

Section: Model Descriptionmentioning

confidence: 99%

“…In the subthreshold regime (Fermi level is in the deep states) of operation of a-IGZO TFT devices (V GS < V T ), the mobile charge carriers are less in number, and the drain current takes the form [9]…”

Section: Model Descriptionmentioning

confidence: 99%

“…V DSe1 is the transition function defined using (3) by replacing V T with V FB . For a transistor operating in the deep subthreshold (well below V T ) regime, carrier diffusion transport mechanism dominates and the drain current is an exponential function of the gate voltage with the form [9]…”

Section: Model Descriptionmentioning

confidence: 99%

“…In order to develop a single continuous drain current model, the expressions in (1), (6), and (8), are sewed together using a weighted tanh function in the order of increasing drain current magnitude. First, the total subthreshold regime drain current is evaluated from sewing the expressions in (4) and 5as [9]…”

Section: Model Descriptionmentioning

confidence: 99%

See 4 more Smart Citations

Parameter Extraction and Compact Modeling of 1/f Noise for Amorphous ESL IGZO TFTs

Muhea

Castillo

Ordonez

et al. 2020

IEEE J. Electron Devices Soc.

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In this paper, the flicker noise properties of bottom-gate ESL structured amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) from two different technologies have been studied and modeled. Model development is carried out by adapting the Unified Model parameter Extraction Method (UMEM), developed for parameter extraction and compact modeling of TFT devices, and the unified 1/f noise model. Furthermore, comparative study of device figures of merits is performed to point out the device performance enhancements that the different fabrication technologies have brought about. It is found out that both devices have low deep state density, whereas the second device demonstrated higher performance in terms of carrier mobility and subthreshold slope. Both the DC and noise models are validated by matching them against experimental data obtained in different regimes of device operation.

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“…The V Dsat and V DSe terms in (1) represent the saturation voltage and the transition from the linear to the saturation region and are defined respectively by [9]…”

Section: Model Descriptionmentioning

confidence: 99%

Section: Model Descriptionmentioning

confidence: 99%

Section: Model Descriptionmentioning

confidence: 99%

Section: Model Descriptionmentioning

confidence: 99%

Section: Model Descriptionmentioning

confidence: 99%

See 3 more Smart Citations

Parameter Extraction and Compact Modeling of 1/f Noise for Amorphous ESL IGZO TFTs

Muhea

Castillo

Ordonez

et al. 2020

IEEE J. Electron Devices Soc.

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Adaptation and comparative analysis of HSPICE level‐61 and level‐62 model for a‐IGZO thin film transistors

Dubey,

Goswami,

Kandpal

2024

Int J Numerical Modelling

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This paper presents a Computer‐aided design (CAD) model for a‐IGZO thin film transistors (TFTs) by adapting SPICE level‐61 RPI a‐Si: H (Hydrogenated Amorphous Silicon) TFT model and level‐62 RPI Poly‐Si (Poly Silicon) TFT model. This work provides a complete understanding of SPICE level‐61 and 62 model parameters, which must be tuned for a‐IGZO TFT simulation. The adapted SPICE models of level‐61 and level‐62 could model all regions of operation of the TFT, that is, above‐threshold and below‐threshold regions. Adapted RPI poly‐Si model also shows the kink effect in ZnO thin film transistors (TFTs) due to the recombination of electron–hole pairs in the channel via boundary trap states present in the poly‐Si TFTs thereby increasing the drain current in the transistors above pinch‐off region. The extracted performance parameters of the adapted models were found to be contiguous with experimental results. The maximum deviation in the subthreshold slope is approximately 5 mV/decade for level‐61 a‐Si TFT, and for level‐62 poly‐Si TFT, deviation in the subthreshold slope is even less, that is, 0.2 mV/decade. The experimental and simulated characteristics, extracted on‐to‐off ratio, negative bias reverse saturation current, and threshold voltage were almost similar. However, an average deviation of 2.4% and 2.27% was observed in the output characteristics of the adapted level‐61 and level‐62 models, respectively.

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Flexible and Printed Electronics

Iñı́guez

2023

More-Than-Moore Devices and Integration for Semiconductors

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A compact model and direct parameters extraction techniques For amorphous gallium-indium-zinc-oxide thin film transistors

Cited by 24 publications

References 26 publications

Parameter Extraction and Compact Modeling of 1/f Noise for Amorphous ESL IGZO TFTs

Parameter Extraction and Compact Modeling of 1/f Noise for Amorphous ESL IGZO TFTs

Adaptation and comparative analysis of HSPICE level‐61 and level‐62 model for a‐IGZO thin film transistors

Flexible and Printed Electronics

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