A compact low DC consumption 24-GHz Cascode HEMT VGA

Tsai, Zuo‐Min; Kao, Jui-Chi; Lin, Kun-You; Wang, Huei

doi:10.1109/apmc.2009.5384354

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2012

2018

Publication Types

Select...

Article2

Other2

Relationship

Self Cite0

Independent4

Authors

Journals

Cited by 4 publications

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

A W-band two-stage cascode amplifier with gain of 25.7 dB

Zhong¹,

Zhang²,

Zhang³

et al. 2013

J. Semicond.

View full text Add to dashboard Cite

A W-band two-stage amplifier MMIC has been developed using a fully passivated 2 20 m gate-width and 0.15 m gate-length InP-based high electron mobility transistor (HEMT) technology. The two-stage amplifier has been realized in combination with a coplanar waveguide technique and cascode topology, thus leading to a compact chip-size of 1.85 0.932 mm 2 and an excellent small-signal gain of 25.7 dB at 106 GHz. Additionally, an inter-digital coupling capacitor blocks low-frequency signal, thereby enhancing the stability of the amplifier. The successful design of the two-stage amplifier MMIC indicates that InP HEMT technology has a great potential for W-band applications.

show abstract