A Compact <i>V</i>-Band Upconversion Mixer With −1.4-dBm OP1dB in SiGe HBT Technology

Qayyum, Jubaid Abdul; Albrecht, John D.; Ulusoy, Ahmet Çağrı

doi:10.1109/lmwc.2019.2901395

Cited by 12 publications

(6 citation statements)

References 9 publications

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“…A number of active mixers have been reported so far in various topologies and processes for different applications. SiGe-based heterojunction bipolar transistor (HBT) mixers [1,2], SiGe-based BiCMOS mixers [3,4,5,6,7], CMOS-based mixers [8,9,10,11] and mixers based on InP HBT technology [12,13,14,15] were presented. Particularly, InP double heterojunction bipolar transistor (DHBT) has the advantages of outstanding high frequency performance, high electron mobility and high breakdown voltage [16,17], which indicates that InP DHBT is an attractive choice for wideband mixers.…”

Section: Introductionmentioning

confidence: 99%

A wideband InP Gilbert-cell mixer using capacitive degeneration and current bleeding technique

Zhen

Cao

et al. 2021

IEICE Electron. Express

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This letter presents a wideband and high conversion gain mixer based on Gilbert-cell in InP DHBT process. Capacitive degeneration is introduced to increase the bandwidth of the mixer with no voltage drop and few cost of area. Current bleeding technique is employed to improve conversion gain. Utilization of device f t is analyzed to achieve 0.919. The measurement demonstrates a conversion gain of 14.5 dB at 26 GHz with -3 dB bandwidth of 49 GHz. BW/ f t of 0.306 and GBP of 260 GHz are obtained, which are believed to be among the best compared to mixers fabricated with the same size process.

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Section: Introductionmentioning

confidence: 99%

A wideband InP Gilbert-cell mixer using capacitive degeneration and current bleeding technique

Zhen

Cao

et al. 2021

IEICE Electron. Express

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“…The performance offered is sufficient for the majority of applications. However, SiGe remains relevant in some applications, i.e., when high output power is required, such as in up-converters targeting mm-wave 5G transmitters [85][86][87]. Regarding linearity, passive mixers are also well known for their excellent behavior which brings some welcome degrees of freedom in the design of LNA-mixer front-ends.…”

Section: Mixersmentioning

confidence: 99%

“…The best OCPs are achieved by Gilbert mixers and particularly SiGe-based ones [86,88,89]. High-voltage supplies allow SiGe mixers to deliver more output power than CMOS.…”

Section: Mixersmentioning

confidence: 99%

Evolution Trends and Paradigms of Low Noise Frequency Synthesis and Signal Conversion Using Silicon Technologies

2022

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Silicon technologies for HF applications have been proven for more than two decades, and technologies have greatly evolved. Whether CMOS or BiCMOS technologies, the unique combination of radio frequency, baseband, and digital functions allow a very high level of integration. While it is possible to achieve fully integrated transceivers, the major advantages of these silicon technologies lie mainly in their unparalleled performance in the field of frequency synthesis and frequency conversion. We propose in this paper a review of the major results obtained on these RF components since the beginning of the 2000s, also considering the impact of the technology node. The back-end of line (BEOL) process on which depends the quality of microwave monolithic integrated circuits (MMICs) is briefly presented in the introductory part. If circuit performances are tightly bound to the active devices (i.e., the heterojunction bipolar transistor SiGe HBT or CMOS transistor), passive elements (i.e., quality factor of inductors and varactors, losses of transmission, or interconnection lines) as well as the definition of the substrate also play a major role. The core of the article is oriented toward the noise of synthesized signals and frequency conversion. Frequency synthesis is presented through the analog design of a voltage-controlled oscillator (VCO) or through the direct digital frequency synthesis (DDFS), for which respective figures of merit are presented and discussed in a second section. The spectral purity of the oscillators being decisive in the definition of the throughput of a link is approached through the comparison of different figures of merit (FoM) for a set of circuits achievements over the selected period. If the realization of free oscillators is closely bound to the phase-locked loop (PLL)-type control loop for VCOs, the DDFS solution provides more direct and more flexible alternative at first sight. Therefore, these two solutions are analyzed collectively. Finally, the oscillator integrated in the transmitter or receiver supplies the needed LO (local oscillator) power to the frequency mixer in the frequency conversion module: henceforth, the third part of this study focuses on high-frequency mixer realizations. We thus consider this LO power in some advanced figure of merit mentioned in the second section. The design trade-off of the mixer is presented in an approach combining LO (conversion gain, channel isolation, and phase noise) and RF (HF noise figure and channel isolation) constraints. The final section provides a summary of the results and trends mentioned in the paper.

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“…Equation (1) shows that when varactor's capacitance C v1 is equal to C gd1 , the stability factor is maximum. As we use a varactor's capacitance, to neutralize the C gd , which can be controlled externally, the PVT variations do not affect the stability of M 1 .…”

Section: Proposed Up-conversion Mixer Designmentioning

confidence: 99%

“…Low power, low voltage and highly linear RF circuits attract considerable attention in regard to prolonging the battery life of communication systems. The 5G system is becoming a necessity in wireless communication [1,2]. Existing technologies, including LTE and 4G mobile communications, cannot satisfy the increasing demands for a fast data rate, low latency and larger capacity.…”

Section: Introductionmentioning

confidence: 99%

Design and Analysis of a Novel 24 GHz Up-Conversion Mixer with Improved Derivative Super-Position Linearizer Technique for 5G Applications

Siddique

Delwar

Behera

et al. 2021

Sensors

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A 24 GHz high linear, high-gain up-conversion mixer is realized for fifth-generation (5G) applications in the 65 nm CMOS process. The mixer’s linearity is increased by applying an Improved Derivative Super-Position (I-DS) technique cascaded between the mixer’s transconductance and switching stage. The high gain and stability of amplifiers in the transconductance stage of the mixer are achieved using novel tunable capacitive cross-coupled common source (TCC-CS) transistors. Using the I-DS, the third-order non-linear coefficient of current is closed to zero, enhancing the linearity. Additionally, a TCC-CS, which is realized by varactors, neutralizes the gate-to-drain parasitic capacitance (Cgd) of transistors in the transconductance stage of the mixer and contributes to the improvement of the gain and stability of the mixer. The measured 1 dB compression point OP1dB of the designed mixer is 4.1 dBm and IP1dB is 0.67 dBm at 24 GHz. The conversion gain of 4.1 dB at 24 GHz and 3.2 ± 0.9 dB, from 20 to 30 GHz is achieved in the designed mixer. Furthermore, a noise figure of 3.8 dB is noted at 24 GHz. The power consumption of the mixer is 4.9 mW at 1.2 V, while the chip area of the designed mixer is 0.4 mm2.

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A Compact V-Band Upconversion Mixer With −1.4-dBm OP1dB in SiGe HBT Technology

Cited by 12 publications

References 9 publications

A wideband InP Gilbert-cell mixer using capacitive degeneration and current bleeding technique

A wideband InP Gilbert-cell mixer using capacitive degeneration and current bleeding technique

Evolution Trends and Paradigms of Low Noise Frequency Synthesis and Signal Conversion Using Silicon Technologies

Design and Analysis of a Novel 24 GHz Up-Conversion Mixer with Improved Derivative Super-Position Linearizer Technique for 5G Applications

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