2020
DOI: 10.3390/app10113865
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A Compact High-Efficient Equivalent Circuit Model of Multi-Quantum-Well Vertical-Cavity Surface-Emitting Lasers for High-Speed Interconnects

Abstract: Due to their low power consumption, high modulation speed, and low cost, vertical-cavity surface-emitting lasers (VCSEL) dominate short-reach data communications as the light source. In this paper, we propose a compact equivalent circuit model with noise effects for high-speed multi-quantum-well (MQW) VCSELs. The model comprehensively accounts for the carrier and photons dynamisms of a MQW structure, which includes separate confinement heterostructure (SCH) layers, barrier (B) layers, and quantum well (QW) lay… Show more

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Cited by 6 publications
(9 citation statements)
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“…This work is an extension of [4] and examples of recent similar works on this topic can be found in [5], [6], [7], [8]. This work together with [5] include the additional use of two sub-circuits to keep track of the free carriers in the barrier regions and in the QWs. This allows for the inclusion of the finite time it takes for the carriers to be captured by the QWs.…”
Section: Introductionmentioning
confidence: 95%
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“…This work is an extension of [4] and examples of recent similar works on this topic can be found in [5], [6], [7], [8]. This work together with [5] include the additional use of two sub-circuits to keep track of the free carriers in the barrier regions and in the QWs. This allows for the inclusion of the finite time it takes for the carriers to be captured by the QWs.…”
Section: Introductionmentioning
confidence: 95%
“…This carrier transport effect is well known to affect the modulation speed of semiconductor lasers [9]. Our work however differs to work [5] in that we employ a different subcircuit for modelling the input impedance and voltage drop over the SCH region. For the latter we use a voltage source instead of passive circuit elements, where voltage is calculated from quasi-Fermi levels and free carrier concentrations in the QWs and above the barriers.…”
Section: Introductionmentioning
confidence: 99%
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“…The parasitic element results from contact pads which introduce resistance, capacitance and inductance to the parasitic circuit. Other resistances come from the top Bragg reflectors, bottom Bragg reflectors and the active region two series parasitic capacitances come also from the oxide layer and active region [7].…”
Section: Introductionmentioning
confidence: 99%
“…The use of compact models to characterize the performance of complex systems in order to make the simulation and design tasks easier and faster is widely extended in different engineering applications: the electric field generated in tunnel field-effect transistors, Najam et al [27]; the circuit models of vertical-cavity surface-emitting lasers, Li et al [28]; the dynamic performance of latent heat thermal storage units, Colangelo et al [29].…”
Section: Introductionmentioning
confidence: 99%