A compact dosimetric system for MOSFETs based on passive NFC tag and smartphone

Carvajal, M.; Escobedo, Pablo; Jiménez-Melguizo, M.; Martínez-García, Maria Sofia; Martínez-Martí, Fernando; Martínez-Olmos, Antonio; Palma, A.

doi:10.1016/j.sna.2017.10.015

Cited by 13 publications

(5 citation statements)

References 35 publications

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“…Otherwise, many applications of power MOSFETs need to be radiationhardened [12]. In addition, the influence of ionizing radiation on some MOSFETs con-taining different materials [13][14][15][16][17][18][19] and on some commercial electronic devices [20][21][22] has been investigated.…”

Section: Introductionmentioning

confidence: 99%

Commercial P-Channel Power VDMOSFET as X-ray Dosimeter

et al. 2022

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The possibility of using commercial p-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) as X-ray sensors is investigated in this case study. In this aspect, the dependence of sensitivity on both the gate voltage and the mean energy for three X-ray beams is examined. The eight gate voltages from 0 to 21 V are applied, and the dependence of the sensitivity on the gate voltage is well fitted using the proposed equation. Regarding X-ray energy, the sensitivity first increases and then decreases as a consequence of the behavior of the mass energy-absorption coefficients and is the largest for RQR8 beam. As the mass energy-absorption coefficients of SiO2 are not found in the literature, the mass energy-absorption coefficients of silicon are used. The behavior of irradiated transistors during annealing at room temperature without gate polarization is also considered.

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Section: Introductionmentioning

confidence: 99%

Commercial P-Channel Power VDMOSFET as X-ray Dosimeter

et al. 2022

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“…The most common name for pMOSFETs used as radiation dosimeters (dosimetric pMOSFETs) is radiation sensitive field-effect transistors (RADFETs). New types of these transistors are being intensively investigated, with the use of new technologies (Abe et al, 2020;Cramer et al, 2018;Jain et al, 2020;Kahraman et al, 2020;Lai et al, 2017;Lee et al, 2018;Liu et al, 2016;Tamersit, 2019;Zeidell et al, 2020), as well as the commercial transistors (Carvajal et al, 2017). Very intensive researches are being carried out in order to improve the characteristics of RADFETs, primarily their sensitivity and recovery (Andreev et al, 2020;Aleksandrov, 2015;Biasi et al, 2020;Carbonetto et al, 2020;Dubey et al, 2018;Kulhar et al, 2019;Sampaio et al, 2020;Yilmaz et al, 2017).…”

Section: Introductionmentioning

confidence: 99%

Radiation sensitive MOSFETs irradiated with various positive gate biases

Ristić

Ilić

Duane

et al. 2021

Journal of Radiation Research and Applied Sciences

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The RADiation sensitive metal-oxide-semiconductor field-effect-transistors (RADFETs) were irradiated with gamma rays up to absorbed dose of 110 Gy(H 2 O). The results of threshold voltage, V T , during irradiation with various positive gate biases showed the increase in V T with gate bias. The threshold voltage shift, ΔV T , during irradiation was fitted very well. The contributions of both the fixed traps (FTs) and switching traps (STs) during radiation on ΔV T were analyzed. The results show the significantly higher contribution of FTs than STs. A function that describes the dependence of threshold voltage shift and its components on gate bias was proposed, which fitted the experimental values very well. The annealing at the room temperature without gate bias of irradiated RADFETs was investigated. The recovery of threshold voltage, known as fading, slightly increase with the gate bias applied during radiation. The ΔV T shows the same changes as the threshold voltage component due to fixed states, ΔV ft , while there is no change in the threshold voltage component due to switching traps, ΔV st .

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“…To avoid the need of battery recharge or replacement an energy harvesting system is present that scavenges power from the embedded solar panels and thermoelectric generator modules. A compact dosimetric system based on passive NFC tag and smartphone was proposed by Carvajal et al in 2017[186]. The system measures dose of an ionizing radiation and was tested by irradiating a commercial DMOS transistor ZVP3306 with photon beam of 6 MV up to 20 Gy.…”

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confidence: 99%

“…Compact dosimetric system based on passive NFC tag and smartphone. Reprinted with permission from[186]. The Android robot is reproduced or modified from work created and shared by Google and used according to terms described in the Creative Commons 3.0 Attribution License.…”

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confidence: 99%

A sensor-centric survey on the development of smartphone measurement and sensing systems

Grossi

2019

Measurement

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Modern mobile phones, featuring high performance microprocessors, rich set of sensors and internet connectivity are largely diffused all over the world and are ideal devices for the development of low-cost sensing systems, in particular for low-income developing countries and rural areas that lack the access to diagnostic laboratories and expensive instrumentation. In the design of a smartphone based sensing system different elements must be taken in consideration such as sensors performance, acquisition rate and privacy preserving strategies when personal data must be shared in the cloud. In this paper a sensor-centric survey on smartphone based sensing systems is presented, covering different fields of application. Two different development approaches will be discussed: 1) the exploitation of the large number of sensors embedded in modern smartphones (high-resolution camera, microphone, accelerometer, gyroscope, magnetometer, GPS); 2) the interfacing with external sensors that communicate with the smartphone by the embedded wireless or wired communication technology.

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A compact dosimetric system for MOSFETs based on passive NFC tag and smartphone

Cited by 13 publications

References 35 publications

Commercial P-Channel Power VDMOSFET as X-ray Dosimeter

Commercial P-Channel Power VDMOSFET as X-ray Dosimeter

Radiation sensitive MOSFETs irradiated with various positive gate biases

A sensor-centric survey on the development of smartphone measurement and sensing systems

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