A compact and low-phase-noise Ka-band pHEMT-based VCO

Piernas, B.; Nishikawa, Kenjiro; Nagatsuma, Tadao; Araki, Koji

doi:10.1109/tmtt.2003.808584

Cited by 29 publications

(9 citation statements)

References 18 publications

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“…In the literature, many VCOs have a relatively good FoM, however, observing the covered frequency range, we notice that it is very low: 5.45% and 6.91% of the central frequency for the two VCOs proposed in [8], 5.44% and 3.3% respectively for the VCOs proposed in [9,10]. On the other side, structures with wide frequency ranges but low phase noise levels, less than -102 dBc/Hz, which do not fulfill the 5G [11][12][13]. In addition to all these considerations, there is also the problem of the large space occupied by these circuits, of which it is in the order of 1.5 mm 2 [9] or much more [12][13][14].…”

Section: Introductionmentioning

confidence: 87%

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28 GHz balanced pHEMT VCO with low phase noise and high output power performance for 5G mm-Wave systems

Es-Saqy

Abata

Mehdi

et al. 2020

IJECE

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This paper presents the study and design of a balanced voltage controlled oscillator VCO for 5G wireless communication systems. This circuit is designed in monolithic microwave integrated circuit (MMIC) technology using PH15 process from UMS foundry. The VCO ensures an adequate tuning range by a single-ended pHEMT varactors configuration. The simulation results show that this circuit delivers a sinusoidal signal of output power around 9 dBm with a second harmonic rejection between 25.87 and 33.83 dB, the oscillation frequency varies between 26.46 and 28.90 GHz, the phase noise is -113.155 and -133.167 dBc/Hz respectively at 1 MHz and 10 MHz offset and the Figure of Merit is -181.06 dBc/Hz. The power consumed by the VCO is 122 mW. The oscillator layout with bias and RF output pads occupies an area of 0.515 mm2.

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Section: Introductionmentioning

confidence: 87%

“…On the other side, structures with wide frequency ranges but low phase noise levels, less than -102 dBc/Hz, which do not fulfill the 5G [11][12][13]. In addition to all these considerations, there is also the problem of the large space occupied by these circuits, of which it is in the order of 1.5 mm 2 [9] or much more [12][13][14].…”

Section: Introductionmentioning

confidence: 99%

28 GHz balanced pHEMT VCO with low phase noise and high output power performance for 5G mm-Wave systems

Es-Saqy

Abata

Mehdi

et al. 2020

IJECE

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“…In general, pHEMT is not suitable for VCO design due to its relatively high flicker noise [1]. However, extensive research on pHEMT based VCOs are still carried out during the last decades in the view of system integration [1][2][3][4][5][6][7]. In [1], a GaAs based differential Colpitts VCO operating at 7.5 GHz and used in a 60 GHz transceiver system is presented.…”

Section: Introductionmentioning

confidence: 99%

“…In [1], a GaAs based differential Colpitts VCO operating at 7.5 GHz and used in a 60 GHz transceiver system is presented. The design in [2] exhibits a single-ended Ka-band VCO by using a common-source series feedback to generate the negative resistance. In addition, by adopting the enhancement/depletion mode pHEMT process, a differential VCO with wide tuning range as well as low phase noise can be implemented with two common-gate transistors [3].…”

Section: Introductionmentioning

confidence: 99%

A Cross-Coupled Ka-Band GaAs-pHEMT Based VCO

Men¹,

Song²,

Thangarasu³

et al. 2017

Proceedings of the International Conference on Computer Networks and Communication Technology (CNCT 2016)

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Abstract.A cross-coupled GaAs pseudomorphic high electron mobility transistor (pHEMT) based Ka-band voltage-controlled oscillator (VCO) is reported in this work, by using commercial OMMIC 0.13 μm depletion-mode power pHEMT (D01PH) process. The simulation of the proposed VCO demonstrates an operating frequency range from 28.54 GHz to 32.44 GHz with the tuning range of 12.8%, an output power from 15.2 dBm to 15.9 dBm, total dc power consumption of 124 mW and power efficiency from 27.2% to 31.9%. The simulated phase noise is from -105.7 dBc/Hz to -100.4 dBc/Hz at 1 MHz offset frequency and the figure-of-merit (FoM) is -207.4 dBc/Hz at the center frequency of 30.3 GHz.

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“…AlGaAs/InGaAs/GaAs based pseudomorphic high electron mobility transistors (p-HEMTs) are potential devices both for microwave and highspeed digital applications [1][2][3][4][5][6]. This is because of the high low-field electron mobility and high saturation velocity of electrons in the InGaAs material used for the channel.…”

Section: Introductionmentioning

confidence: 99%