A Compact a-IGZO TFT Model Based on MOSFET SPICE ${\rm Level}=3$ Template for Analog/RF Circuit Designs

Perumal, Charles; Ishida, Koichi; Shabanpour, R.; Kheradmand‐Boroujeni, Bahman; Petti, Luisa; Münzenrieder, Niko; Salvatore, Giovanni A.; Carta, Corrado; Tröster, Gerhard; Ellinger, Frank

doi:10.1109/led.2013.2279940

Cited by 47 publications

(19 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A more complete model was presented by Perumal et al, who reported the simulation of flexible IGZO TFTs based on a level 3 HSpice template. 213 Fig . 21 demonstrates the successful simulation of the TFT DC performance parameters.…”

mentioning

confidence: 99%

Metal oxide semiconductor thin-film transistors for flexible electronics

Petti

Münzenrieder

Vogt

et al. 2016

Applied Physics Reviews

Self Cite

545

430

View full text Add to dashboard Cite

mentioning

confidence: 99%

Metal oxide semiconductor thin-film transistors for flexible electronics

Petti

Münzenrieder

Vogt

et al. 2016

Applied Physics Reviews

Self Cite

545

430

View full text Add to dashboard Cite

“…Oxide semiconductors, and in particular amorphous a-IGZO, provide electron mobility µ ef f > 10 cm 2 /Vs [7], well above the standard values obtained for organic materials and amorphous-Si [8], [9]. After modeling all the transistor parameters for DC and AC characteristics [10], we studied the implementation of the two circuits using two metals layers (1 st metal: gate layer, 2 nd metal: source, drain and interconnections) and three metals (1 st metal: gate layer, 2 nd metal: source and drain, 3 rd metal: interconnections) for the first time (see Fig. 1a).…”

Section: Introductionmentioning

confidence: 68%

“…The modeling of a-IGZO TFTs for circuit design is based on our previous work [10]. As a first step, the device performance was simulated using two and three metals layers (and same layout) by Keysight ADS software and the parasitic capacitances C p and resistances R p were extracted.…”

Section: Design and Fabricationmentioning

confidence: 99%

Flexible In–Ga–Zn–O-Based Circuits With Two and Three Metal Layers: Simulation and Fabrication Study

Cantarella

Ishida

Petti

et al. 2016

IEEE Electron Device Lett.

View full text Add to dashboard Cite

Abstract-The quest for high-performance flexible circuits call for scaling of the minimum feature size in Thin-Film Transistors (TFTs). Although reduced channel lengths can guarantee an improvement in the electrical properties of the devices, proper design rules also play a crucial role to minimize parasitics when designing fast circuits. In this letter, systematic Computer-Aided Design (CAD) simulations have guided the fabrication of highperformance flexible operational amplifiers (opamps) and logic circuits based on Indium-Gallium-Zinc-Oxide (IGZO) TFTs. In particular, the performance improvements due to the use of an additional third metal layer for the interconnections has been estimated for the first time. Encouraged by the simulated enhancements resulting by the decreased parasitic resistances and capacitances, both TFTs and circuits have been realized on a free-standing 50 µm thick polymide foil using three metal layers. Despite the thicker layer stack, the TFTs have shown mechanical stability down to 5 mm bending radii. Moreover, the opamps and the logic circuits have yielded improved electrical performance with respect to the architecture with two metal layers: gainbandwidth-product (GBWP) increased by 16.9 %, for the first one, and propagation delay (t pd ) decreased by 43 %, for the latter one.

show abstract

“…It can be used to transmit information and sensor data such as temperature, light intensity, or humidity. Previous compact device models [8] are being advanced [9] to allow an efficient circuit design.…”

Section: Project Ellinger-tröster -Wireless Indium-gallium-zink-oxidementioning

confidence: 99%

Program FFlexCom — High frequency flexible bendable electronics for wireless communication systems

Meister

Ellinger

Bartha

et al. 2017

2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS)

Self Cite

View full text Add to dashboard Cite

Abstract-Today, electronics are implemented on rigid substrates. However, many objects in daily-life are not rigid -they are bendable, stretchable and even foldable. Examples are paper, tapes, our body, our skin and textiles. Until today there is a big gap between electronics and bendable daily-life items. Concerning this matter, the DFG Priority Program FFlexCom aims at paving the way for a novel research area: Wireless communication systems fully integrated on an ultra-thin, bendable and flexible piece of plastic or paper. The Program encompasses 13 projects led by 25 professors. By flexibility we refer to mechanical flexibility, which can come in flavors of bendability, foldability and, stretchability. In the last years the speed of flexible devices has massively been improved. However, to enable functional flexible systems and operation frequencies up to the sub-GHz range, the speed of flexible devices must still be increased by several orders of magnitude requiring novel system and circuit architectures, component concepts, technologies and materials.

show abstract

A Compact a-IGZO TFT Model Based on MOSFET SPICE ${\rm Level}=3$ Template for Analog/RF Circuit Designs

Cited by 47 publications

References 11 publications

Metal oxide semiconductor thin-film transistors for flexible electronics

Metal oxide semiconductor thin-film transistors for flexible electronics

Flexible In–Ga–Zn–O-Based Circuits With Two and Three Metal Layers: Simulation and Fabrication Study

Program FFlexCom — High frequency flexible bendable electronics for wireless communication systems

Contact Info

Product

Resources

About