A Compact 10W 2-20 GHz GaN MMIC Power Amplifier Using a Decade Bandwidth Output Impedance Transformer

Roberg, Michael; Pilla, Manyam; Schafer, Scott; Kywe, Thi Ri Mya; Flynt, Robert; Chu, Nguyenvu

doi:10.1109/ims30576.2020.9223951

Cited by 8 publications

(1 citation statement)

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“…Later, using optimization, nonuniform distributed amplifiers were implemented by varying the parameters of the distributed amplifiers [3]. The common source [4][5] and cascode [6][7][8] topologies are the most commonly used in DA design. In [5], a uniform DA design used a gain control switch and 8 GaN HEMT cells of CS topology to obtain 8±1.5dB gain.…”

Section: Introductionmentioning

confidence: 99%

DC-38GHz Nonuniform Distributed Amplifier Design with Gate and Drain Line Optimization Using 0.1µm GaAs pHEMT Technology

Lakshmi

Sharma

2023

Eng. Technol. Appl. Sci. Res.

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This paper presents an optimized three-cell Nonuniform Distributed Amplifier (NUDA) suitable for optoelectronic drivers in the Q band. This is the first NUDA of Darlington topology designed with the 0.1µm GaAs pHEMT process with a transition frequency fT of 130GHz. Gate microstrip line sections, drain microstrip line sections, and active device sizes were optimized to obtain high gain and large bandwidth from a Monolithic Microwave Integrated Circuit (MMIC) Distributed Amplifier (DA). This paper presents two NUDA designs with different topologies. The first was designed with a three-stage Common Source (CS) topology that enhanced the bandwidth up to 34GHz with a gain greater than 8dB, and the second was designed with two Darlington stages and one CS stage that enhanced the bandwidth up to 38GHz with a gain greater than 8dB. The bandwidth enhancement of NUDA with the Darlington topology was compared and verified with the NUDA of common source topologies.

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