Abstract:This paper presents an optimized three-cell Nonuniform Distributed Amplifier (NUDA) suitable for optoelectronic drivers in the Q band. This is the first NUDA of Darlington topology designed with the 0.1µm GaAs pHEMT process with a transition frequency fT of 130GHz. Gate microstrip line sections, drain microstrip line sections, and active device sizes were optimized to obtain high gain and large bandwidth from a Monolithic Microwave Integrated Circuit (MMIC) Distributed Amplifier (DA). This paper presents two N… Show more
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