A combined fluid dynamic and 3D kinetic Monte Carlo investigation of the selective deposition of GaAs and InP

Selective Area Masked Growth (Nano to Micro)

“…Ideally, epitaxial single crystal will grow uniformly only in the windows opened in the mask. To predict the growth enhancement effect and to control the thickness and composition of the deposited layers, much effort has been devoted to develop models accurately that describe the growth kinetics [7][8][9][10][11][12][13][14][15][16][17][18][19]. Polycrystalline growth on the mask can be avoided by choosing a halogen-based precursor and suitable growth conditions [2,[4][5][6].…”

One-step nano-selective area growth (nano-SAG) of localized InAs/InP quantum dots: First step towards single-photon source applications

“…the percentage of the surface opened by the dielectric mask. In fact, it has been demonstrated that the GR increases for the OR decreasing [10][11][12][13]. Hence, it is easily comprehensible that in the case of substrate totally covered with mask containing nanometer scale openings, the GR steeply increases in the growth regions, as seen in Fig.…”

Current challenges in the design and control of multiscale systems

“…This method is suitable for physical systems for which thermodynamic and transport properties are dominated by the pair interactions between the atoms or molecules that conform the system. Examples of these physical systems in the chemical engineering field are fluids (mostly gases) at low density and moderate or low temperatures, for example laminar flow and chemical vapour deposition (Rondanini et al, 2004;Vlachos, 2005). This method is also known as the one-way coupling approach because there is no feedback between the methods at the different scales.…”