One-step nano-selective area growth (nano-SAG) of localized InAs/InP quantum dots: First step towards single-photon source applications

Gogneau, N.; Gratiet, L. Le; Cambril, E.; Beaudoin, G.; Patriarche, G.; Beveratos, Alexios; Hostein, Richard; Robert-Philip, I.; Marzin, J. Y.; Sagnes, I.

doi:10.1016/j.jcrysgro.2008.04.019

Cited by 11 publications

(7 citation statements)

References 13 publications

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“…21 meV [83], 17.5 meV [84]), but currently only at a density of N QD ≈ 10 10 cm −2 . Alternative growth techniques like site-controlled growth [85,86] yield inhomogeneous broadening as low as 4 meV [85], but no QD density is given. Sub-monolayer QD are another promising material system with high gain and low broadening [36].…”

Section: Discussionmentioning

confidence: 99%

Quantum Dot Devices

Wang¹

2012

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The nonlinear optical response of self-assembled quantum dots is relevant to the application of quantum dot based devices in nonlinear optics, all-optical switching, slow light and self-organization. Theoretical investigations are based on numerical simulations of a spatially and spectrally resolved rate equation model, which takes into account the strong coupling of the quantum dots to the carrier reservoir created by the wetting layer states. The complex dielectric susceptibility of the ground state is obtained. The saturation is shown to follow a behavior in between the one for a dominantly homogeneously and inhomogeneously broadened medium. Approaches to extract the nonlinear refractive index change by fringe shifts in a cavity or self-lensing are discussed. Experimental work on saturation characteristic of InGa/GaAs quantum dots close to the telecommunication O-band (1.24-1.28 µm) and of InAlAs/GaAlAs quantum dots at 780 nm is described and the first demonstra

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Section: Discussionmentioning

confidence: 99%

Quantum Dot Devices

Wang¹

2012

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“…HSQ is a negative tone resist that is converted to silicon oxide after e-beam exposure making a MOVPE compatible mask directly. This avoids the deposition and etching of an additional glass layer and removing e-beam resist before growth [2]. The small molecular size and high etching resistance is suitable for getting small feature sizes and perform in-situ etching [3].…”

Section: Fabricationmentioning

confidence: 99%

Nano-selective area growth of InGaAs/InP using CBr4 in- situ etching

Kuznetsova

Semenova

Kadkhodazadeh

et al. 2012

Advanced Photonics Congress

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“…Precise positioning of the active material was achieved by means of electron beam lithography with hydrogen silsesquioxane (HSQ) as a mask [9]. Due to its high thermal resistance [10], HSQ is compatible with high-temperature MOVPE growth. The conversion of the resist into silica after exposure helps avoiding critical fabrication steps such as silicon dioxide/nitride deposition and reactive ion etching (RIE) which may introduce defects.…”

Section: Introductionmentioning

confidence: 99%