A CMOS Temperature Sensor With Versatile Readout Scheme and High Accuracy for Multi-Sensor Systems

Tang, Zhong; Fang, Yun; Yu, Xiaopeng; Zheng, Shuang; Tan, Nianxiong

doi:10.1109/tcsi.2018.2853649

Cited by 29 publications

(12 citation statements)

References 20 publications

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“…configuration, especially the V BE gain (e.g., α in [19]), it is still beneficial if we can minimize the number of V BE sampling in one temperature conversion to reduce the total noise sampled from the sensor frontend, especially for lowpower high-resolution sensors. With this consideration, this work digitizes the ratio Z T = k • V BE /V BE as it does not sample V BE in every clock cycle, with k being a gain factor to accommodate for the readout dynamic range [11], [21]. k (set to be 3 or 6 in this work) is smaller than α (=16) in [19] or V BE /V BE max (=28) in the zoom ADC readout [20].…”

Section: B Sensor Readout Selectionmentioning

confidence: 99%

Subranging BJT-Based CMOS Temperature Sensor With a ±0.45 °C Inaccuracy (3σ) From −50 °C to 180 °C and a Resolution-FoM of 7.2 pJ·K² at 150 °C

Wang

Law

2022

IEEE J. Solid-State Circuits

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This article presents a BJT-based CMOS 1 temperature sensor with a wide sensing range from −50 • C to 2 180 • C. To effectively relax the sensor resolution requirement 3 and conversion time over the entire temperature range to 4 improve energy efficiency, we introduce a nonlinear subranging 5 readout scheme together with double sampling to achieve 6 dynamic reconfiguration of the sensor readout according to the 7 ambient temperature. We further reduce the sensor power at 8 high temperature by devoting the β-cancellation circuit only 9 for BJT biasing while applying a temperature-independent bias 10 current for the other sensor building blocks. Implemented in 11 0.18-μm CMOS with four-wire connections and switch-leakage 12 compensation based on small BJTs, the proposed sensor chip 13 prototype achieves a high resolution-FoM of 7.2 pJ•K 2 at 150 • C, 14 while featuring a small sensing error of ±0.45 • C under a 1.5-V 15 supply.

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Section: B Sensor Readout Selectionmentioning

confidence: 99%

Subranging BJT-Based CMOS Temperature Sensor With a ±0.45 °C Inaccuracy (3σ) From −50 °C to 180 °C and a Resolution-FoM of 7.2 pJ·K² at 150 °C

Wang

Law

2022

IEEE J. Solid-State Circuits

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“…In order to realize the gain factor

= 3, the differential input voltage of the ADC applies the following sequence of voltages: +

, −

, +

when BS = 1 and +

, −

, +

, 0 when BS = 0. As shown in Figure 6 , a cascade-of-integrators feedforward form (CIFF) structure was used because the feedforward structure reduces the output swing in each stage, so it is easy to meet integrators’ linearity and slewing requirements [ 17 ]. The input of the second-order incremental

ADC changes corresponding to the bit-stream.…”

Section: Readout Circuitmentioning

confidence: 99%

An Energy-Efficient BJT-Based Temperature Sensor with ±0.8 °C (3σ) Inaccuracy from −50 to 150 °C

Qin

Huang

Liu

et al. 2022

Sensors

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This article presents an energy-efficient BJT-based temperature sensor. The output of sensing front-ends is modulated by employing an incremental Δ-Σ ADC as a readout interface. The cascoded floating-inverter-based dynamic amplifier (FIA) is used as the integrator instead of the conventional operational transconductance amplifier (OTA) to achieve a low power consumption. To enhance the accuracy, chopping and dynamic element matching (DEM) are applied to eliminate the component mismatch error while β-compensation resistor and optimized bias current are used to minimize the effect of β variation. Fabricated in a standard 180-nm CMOS process, this sensor has an active area of 0.13 mm2. While dissipating only 45.7 μW in total, the sensor achieves an inaccuracy of ±0.8 °C (3σ) from −50 °C to 150 °C after one-point calibration.

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“…Using two sampling capacitors in the proposed ADC requires a different charge-balancing scheme than that of the zoom-ADC. Similar to [20], the ADC digitizes the ratio Y T = 3 • ∆V BE /V BE2 , which varies from 0.15 to 0.72 as T die varies from −40 • C to +180 • C. The factor of 3 was chosen to maximize the ADC's dynamic range in this temperature range.…”

Section: B Charge-balancing Scheme In the Low-leakage Adcmentioning

confidence: 99%

A BJT-Based Temperature-to-Digital Converter With a ±0.25 °C 3$\sigma$ -Inaccuracy From −40 °C to +180 °C Using Heater-Assisted Voltage Calibration

Yousefzadeh

Makinwa

2020

IEEE J. Solid-State Circuits

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This paper presents a BJT-based Temperature-to-Digital-Converter (TDC) that achieves ±0.25 • C 3σ-inaccuracy from −40 • C to +180 • C after a heater assisted voltage calibration. Its switched-capacitor (SC) ADC employs two samplingcapacitors, and thus the minimum number of critical sampling switches, which minimizes the effects of switch leakage at high temperatures and improves accuracy. The TDC is also equipped with an on-chip heater, with which the sensing BJTs can be rapidly (<0.5 s) heated to about 110 • C. This, in turn, enables voltage calibration at two different temperatures without the need for a temperature-controlled environment. Realized in a 0.16 µm standard CMOS, the TDC, including the on-chip heater, occupies 0.15 mm 2 and operates from 1.8 V .

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A CMOS Temperature Sensor With Versatile Readout Scheme and High Accuracy for Multi-Sensor Systems

Cited by 29 publications

References 20 publications

Subranging BJT-Based CMOS Temperature Sensor With a ±0.45 °C Inaccuracy (3σ) From −50 °C to 180 °C and a Resolution-FoM of 7.2 pJ·K² at 150 °C

Subranging BJT-Based CMOS Temperature Sensor With a ±0.45 °C Inaccuracy (3σ) From −50 °C to 180 °C and a Resolution-FoM of 7.2 pJ·K² at 150 °C

An Energy-Efficient BJT-Based Temperature Sensor with ±0.8 °C (3σ) Inaccuracy from −50 to 150 °C

A BJT-Based Temperature-to-Digital Converter With a ±0.25 °C 3$\sigma$ -Inaccuracy From −40 °C to +180 °C Using Heater-Assisted Voltage Calibration

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