A CMOS low power, process/temperature variation tolerant RSSI with an integrated AGC loop

Lei, Qianqian; Lin, Min; Yin, Shi

doi:10.1088/1674-4926/34/3/035007

Search citation statements

Order By: Relevance

Paper Sections

Select...

Rssiv1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2015

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

(1 citation statement)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…From Equation (12), while V I decreases, the deviation of the RSSI value due to A variation increases, and while V I increases, the deviation of the RSSI value due to V s variation decreases.…”

Section: Rssivmentioning

confidence: 99%

A CMOS high resolution, process/temperature variation tolerant RSSI for WIA-PA transceiver

Yang

Jiang

et al. 2015

J. Semicond.

View full text Add to dashboard Cite

This paper presents a high resolution, process/temperature variation tolerant received signal strength indicator (RSSI) for wireless networks for industrial automation process automation (WIA-PA) transceiver fabricated in 0.18 μm CMOS technology. The active area of the RSSI is 0.24 mm2. Measurement results show that the proposed RSSI has a dynamic range more than 70 dB and the linearity error is within ±0.5 dB for an input power from −70 to 0 dBm (dBm to 50 Ω), the corresponding output voltage is from 0.81 to 1.657 V and the RSSI slope is 12.1 mV/dB while consuming all of 2 mA from a 1.8 V power supply. Furthermore, by the help of the integrated compensation circuit, the proposed RSSI shows the temperature error within ±1.5 dB from −40 to 85 °C, and process variation error within ±0.25 dB, which exhibits good temperature-independence and excellent robustness against process variation characteristics.

show abstract

Section: Rssivmentioning

confidence: 99%