A CMOS image sensor for high-speed imaging

Stevanovic, N.; Hillebrand, M.; Hosticka, B.J.; Teuner, A.

doi:10.1109/isscc.2000.839710

Cited by 50 publications

(33 citation statements)

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“…On the right is an enhanced version that includes an additional transistor and a capacitor that together act as a sample and hold or shutter. The inclusion of a sample and hold is particularly valuable in high speed imaging [7], where it can be used as a fast shutter and also insures that the entire focal plane is sampled at once, rather than in a raster-scan fashion. This can eliminate a type of distortion when imaging moving subjects.…”

Section: Cmos Circuit and Epitaxial Sensor Combinationsmentioning

confidence: 99%

Integrated x-ray and charged particle active pixel CMOS sensor arrays using an epitaxial silicon-sensitive region

Kleinfelder

Bichsel

Bieser

et al. 2003

X-Ray and Gamma-Ray Detectors and Applications IV

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Integrated CMOS Active Pixel Sensor (APS) arrays have been fabricated and tested using X-ray and electron sources. The 128 by 128 pixel arrays, designed in a standard 0.25 micron process, use a ~10 micron epitaxial silicon layer as a deep detection region. The epitaxial layer has a much greater thickness than the surface features used by standard CMOS APS, leading to stronger signals and potentially better signal-to-noise ratio (SNR). On the other hand, minority carriers confined within the epitaxial region may diffuse to neighboring pixels, blur images and reduce peak signal intensity. But for low-rate, sparse-event images, centroid analysis of this diffusion may be used to increase position resolution. Careful trade-offs involving pixel size and sense-node area verses capacitance must be made to optimize overall performance. The prototype sensor arrays, therefore, include a range of different pixel designs, including different APS circuits and a range of different epitaxial layer contact structures. The fabricated arrays were tested with 1.5 GeV electrons and Fe-55 X-ray sources, yielding a measured noise of 13 electrons RMS and an SNR for single Fe-55 X-rays of greater than 38.

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Section: Cmos Circuit and Epitaxial Sensor Combinationsmentioning

confidence: 99%

Integrated x-ray and charged particle active pixel CMOS sensor arrays using an epitaxial silicon-sensitive region

Kleinfelder

Bichsel

Bieser

et al. 2003

X-Ray and Gamma-Ray Detectors and Applications IV

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“…These requirements, however, cannot be achieved using the standard APS architecture used in [13]. To address this limitation, Stevanovic et al [14] describe a 256 256 APS with per-pixel storage capacitor to facilitate pixel-parallel image acquisition. Analog pixel values are multiplexed and read out through four analog outputs, achieving over 1000 frames/s.…”

mentioning

confidence: 99%

A 10000 frames/s CMOS digital pixel sensor

Kleinfelder

Lim

Liu

et al. 2001

IEEE J. Solid-State Circuits

319

158

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Abstract-A 352 288 pixel CMOS image sensor chip with perpixel single-slope ADC and dynamic memory in a standard digital 0.18-m CMOS process is described. The chip performs "snapshot" image acquisition, parallel 8-bit A/D conversion, and digital readout at continuous rate of 10 000 frames/s or 1 Gpixels/s with power consumption of 50 mW. Each pixel consists of a photogate circuit, a three-stage comparator, and an 8-bit 3T dynamic memory comprising a total of 37 transistors in 9.4 9.4 m with a fill factor of 15%. The photogate quantum efficiency is 13.6%, and the sensor conversion gain is 13.1 V/e . At 1000 frames/s, measured integral nonlinearity is 0.22% over a 1-V range, rms temporal noise with digital CDS is 0.15%, and rms FPN with digital CDS is 0.027%. When operated at low frame rates, on-chip power management circuits permit complete powerdown between each frame conversion and readout. The digitized pixel data is read out over a 64-bit (8-pixel) wide bus operating at 167 MHz, i.e., over 1.33 GB/s. The chip is suitable for general high-speed imaging applications as well as for the implementation of several still and standard video rate applications that benefit from high-speed capture, such as dynamic range enhancement, motion estimation and compensation, and image stabilization.Index Terms-ADC, CMOS image sensor, digital pixel sensor, high-speed imaging, image sensor, memory.

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“…8). For instance, images acquisition of fast-moving objects requires imagers with high photoresponsivity at short integration times, synchronous exposure, and high-speed parallel readout [116].…”

Section: Needs and Problem Solvingmentioning

confidence: 99%

“…Between 1998 and 2000, N. Stevanovic and M. Hillebrand [6,116,117,114] reported a high speed CMOS camera (see Fig. 9).…”

Section: Manufactured Imagersmentioning

confidence: 99%

Review of CMOS image sensors

Bigas

Cabruja

Salví

2006

Microelectronics Journal

481

230

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The role of CMOS Image Sensors since their birth around the 1960s, has been changing a lot. Unlike the past, current CMOS Image Sensors are becoming competitive with regard to Charged Couple Device (CCD) technology. They offer many advantages with respect to CCD, such as lower power consumption, lower voltage operation, on-chip functionality and lower cost. Nevertheless, they are still too noisy and less sensitive than CCDs.Noise and sensitivity are the key-factors to compete with industrial and scientific CCDs. It must be pointed out also that there are several kinds of CMOS Image sensors, each of them to satisfy the huge demand in different areas, such as Digital photography, industrial vision, medical and space applications, electrostatic sensing, automotive, instrumentation and 3D vision systems.In the wake of that, a lot of research has been carried out, focusing on problems to be solved such as sensitivity, noise, power consumption, voltage operation, speed imaging and dynamic range. In this paper, CMOS Image Sensors are reviewed, providing information on the latest advances achieved, their applications, the new challenges and their limitations. In conclusion, the State-of-the-art of CMOS Image Sensors. q

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A CMOS image sensor for high-speed imaging

Cited by 50 publications

References 1 publication

Integrated x-ray and charged particle active pixel CMOS sensor arrays using an epitaxial silicon-sensitive region

Integrated x-ray and charged particle active pixel CMOS sensor arrays using an epitaxial silicon-sensitive region

A 10000 frames/s CMOS digital pixel sensor

Review of CMOS image sensors

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