A CMOS Analog Frontend for a Passive UHF RFID Tag

Facen, A.; Boni, Andrea

doi:10.1109/lpe.2006.4271850

Cited by 15 publications

(4 citation statements)

References 3 publications

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“…Fig. 3 shows the circuit of the full-wave gate cross-coupled CMOS bridge rectifier (FWGR) discussed in [2,3]. When V in+ is higher than V in− , M 1 and M 4 make up a current loop from V in+ to V in− , and vice versa.…”

Section: A Proposed High-efficiency Cmos Bridge Rectifiermentioning

confidence: 99%

Power management with energy harvesting from a headphone jack

Hsieh

Lee

2014

2014 IEEE International Symposium on Circuits and Systems (ISCAS)

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This paper presents a high-efficiency rectifier and low-dropout regulator (LDO) for a body area network. The rectifier receives signal for energy harvesting, and the LDO is employed to generate stable supply voltage. The rectifier uses bootstrapped capacitors and adaptive voltage controller to reduce threshold voltage and to improve further the power conversion efficiency (PCE). The LDO combines voltage buffer, polezero tracking, and pseudo resistor technologies to achieve low quiescent current and precise output voltage. This chip has been fabricated by using the TSMC 0.18 µm 1P6M CMOS technology. The core area is 0.1 mm 2 . Circuit-level simulation reveals that the PCE of the proposed rectifier is 90.7% when the input peak-to-peak voltage is 2.3 V, the output load is 2 kΩ, and the quiescent current of LDO is 15.27 µA.

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Section: A Proposed High-efficiency Cmos Bridge Rectifiermentioning

confidence: 99%

Power management with energy harvesting from a headphone jack

Hsieh

Lee

2014

2014 IEEE International Symposium on Circuits and Systems (ISCAS)

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“…The circuit diagram is shown in Figure 10 [7]. Transistor M 1 is a MOS varactor that operates in inversion or in cutoff, depending on the input signal, causing the variation of the capacitance seen at the output of the modulator.…”

Section: Modulatormentioning

confidence: 99%

Development and Implementation of RFID Technology

Li¹

2009

Development and Implementation of RFID Technology

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“…This is important, because the RF front end of the microchip has to be optimized in terms of the efficiency of the RF rectifier; the resulting input impedance is then a secondary parameter. [Facen et al, 2006] Consequently, the RFID transponder chips and antennas are practically never 50 Ohm or even self-resonant structures. Instead, a very typical feed impedance of the transponder antenna is about (20 + j150) Ohms at 900 MHz.…”

Section: Pifas and Paffasmentioning

confidence: 99%