A circuit technique for broadbanding the electronic tuning range of Gunn oscillators

Aitchison, C.S.; Gelsthorpe, R. V.

doi:10.1109/jssc.1977.1050836

Cited by 17 publications

(2 citation statements)

References 9 publications

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“…In addition, the bandwidth of the diode parametric amplifier [3] and the tuning range of the Neton and Gough oscillator [4] can also be further improved by using the reactance compensation technique. To achieve high efficiency and broad bandwidth, a two-stage fully integrated class-E PA with the reactance compensation technique is proposed using a monolithic microwave integrated circuit (MMIC) technology in this letter.…”

Section: Introductionmentioning

confidence: 99%

A High Efficiency Broadband Class-E Power Amplifier Using a Reactance Compensation Technique

Lin

Chang

2010

IEEE Microw. Wireless Compon. Lett.

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This letter presents a high efficiency broadband fully integrated class-E power amplifier (PA) using a 0.5 m enhancement/depletion-pseudomorphic high-electron mobility transistor (E/D-PHEMT) process. The proposed PA is based on a class-E topology with a reactance compensation technique. To achieve high efficiency and broad bandwidth, the reactance compensation component is employed in the load network of the class-E PA. From 1.5 to 3.8 GHz, this circuit demonstrates a power added efficiency (PAE) of 62% and an output 1 dB compression point (P 1 dB ) of higher than 27 dBm. Index Terms-Enhancement/depletion pseudomorphic high electron mobility transistor (E/D-PHEMT), high efficiency, power amplifier (PA), reactance compensation.

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Section: Introductionmentioning

confidence: 99%

A High Efficiency Broadband Class-E Power Amplifier Using a Reactance Compensation Technique

Lin

Chang

2010

IEEE Microw. Wireless Compon. Lett.

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“…For example, a simple network consisting of a series-resonant LC circuit, tuned on the fundamental and parallel inductances, which provides a constant-load phase angle of 50°in a frequency range of about 50%, corresponds to Class E mode with shunt capacitance [3]. For the first time, such a reactance compensation technique using a single-resonant circuit was applied to varactor-tuned Gunn oscillators and parametric amplifiers [4]. Furthermore, it is possible to increase the tuning range of an oscillator by adding more stages of reactance compensation.…”

Section: Introductionmentioning

confidence: 99%

Broadband high-efficiency monolithic InGaP/GaAs HBT power amplifiers for wireless applications

Jäger¹,

Grebennikov²,

Heaney³

et al. 2003

Int J RF and Microwave Comp Aid Eng

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In this article, a broadband approach to high-efficiency power amplifier performance, based on the parallel-circuit Class E mode, is discussed. Results for a practical implementation of multi-band and multi-mode handset power amplifiers are shown. Measurements demonstrate the feasibility of the concept for highly efficient operation of DCS1800, PCS1900, CDMA2000, and WCDMA. PAE is greater than 50% at 30 dBm output power in the DCS1800 and PCS1900 bands, as well as better than 38% at 27 dBm output power and an ACLR of ؊37 dBc is achieved for WCDMA operation.

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High‐Efficiency Power Amplifiers

Grebennikov¹

2011

RF and Microwave Transmitter Design

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A circuit technique for broadbanding the electronic tuning range of Gunn oscillators

Cited by 17 publications

References 9 publications

A High Efficiency Broadband Class-E Power Amplifier Using a Reactance Compensation Technique

A High Efficiency Broadband Class-E Power Amplifier Using a Reactance Compensation Technique

Broadband high-efficiency monolithic InGaP/GaAs HBT power amplifiers for wireless applications

High‐Efficiency Power Amplifiers

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