Broadband high-efficiency monolithic InGaP/GaAs HBT power amplifiers for wireless applications

Jäger, Herbert; Grebennikov, Andrei; Heaney, E.; Weigel, Robert

doi:10.1002/mmce.10107

Cited by 14 publications

(1 citation statement)

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“…The optimum operation of the class‐E power amplifier and the solution to the mentioned drawbacks can be obtained using two main methods: namely active device selection and circuit configuration [9]. The class‐E amplifier has various configurations such as the cascade [10] and push–pull [11].…”

Section: Introductionmentioning

confidence: 99%

Design of broadband and high‐efficiency class‐E amplifier with pHEMT using a novel low‐pass microstrip resonator cell

Hayati

Lotfi

2013

Micro & Optical Tech Letters

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2.88 GHz. For the lower mode with C ¼ 0.6 pF and the higher mode with C ¼ 5 pF, the effects of varying / on CP performance are given in Figures 4 and 5, respectively. The simulation results suggest that an axial ratio of less than 2 dB can be found when / ranges between 10 and 25 for the lower mode and between 12 and 16 for the higher mode. RECONFIGURABLE DESIGN AND EXPERIMENTAL RESULTSAn antenna prototype with electrically switching was realized using a varactor diode (BB837, Siemens Semiconductor Group). For the dc bias (V 0 ) used for controlling the varactor, its positive is connected to the feed line through a RF choke, which is composed of a high-impedance meandered microstrip line and a grounded capacitor of 1 nF, and the negative is directly linked to the RF ground plane, as shown in Figure 1. Figure 6 exhibits the experimental results when V 0 is switched between two different values. From the measured results, it can be seen that the frequency with minimum axial ratio is 1.83 GHz for the case of V 0 ¼ 28 V and it is 2.96 GHz for the case of V 0 ¼ 6 V. The CP bandwidths, determined by 3 dB axial ratio, are 2.7 and 3.3% at the lower and higher CP operating frequencies, respectively. In addition, Figure 6 also demonstrates that a return loss of less than 10 dB is achieved within the two CP bandwidths. Therefore, the antenna can perform the dualfrequency operation with a frequency ratio of about 1.6 through switching.The radiation patterns at 1.83 and 2.96 GHz are measured and their results are plotted in Figure 7. Broadside radiation with good CP performance is observed for each operating frequency, and the polarization in the plane of z > 0 is left-handed. The peak gain at 1.83 GHz is about 3.3 dBic and it is merely 0.2 dB lower than that at 2.96 GHz. CONCLUSIONA design for circularly polarized annular slot antennas with switchable frequency has been presented. Only one diode is required in the reconfigurable design. With controlling the dc bias of the diode, the antenna can perform dual-frequency operation with a high frequency ratio. Moreover, the antenna at the two operating frequencies has almost the same radiation pattern, polarization performance, and peak gain.ABSTRACT: In this article, a high-efficient class-E amplifier design with low voltage and broadband characteristics using a novel Front Coupled Tapered Compact Microstrip Resonant Cell is presented. The proposed micorstrip resonator is used as the harmonic control network in order to suppress higher order harmonics, which obtained the optimized impedance matching for the fundamental and harmonics. The class-E amplifier is realized from 0.7 to 1.8 GHz, and obtained the power added efficiency of 72.5-77.5%. The maximum value of Power added efficiency (PAE) is 79.7% with 11-dBm input power at 1.5 GHz. The designed class-E amplifier using the proposed harmonic control network gained 15.34% increment in PAE, and 25.6% reduction in the circuit size in comparison with the conventional class-E amplifier. The simulation and measurement results show th...

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Section: Introductionmentioning

confidence: 99%