Intel h VARIABILITY IN DEVICE and circuit parameters is one of the primary challenges in the semiconductor industry today. Parameter variations adversely affect the performance and energy efficiency of microprocessors across all market segments, ranging from small embedded cores in a system-on-chip (SoC) to large multi-core servers. A distinguishing feature of a parameter variation is the temporal characteristic (i.e., static or dynamic). A static parameter variation results from variability in the manufacturing process. Although manufacturing-induced parameter variations change from die to die, these parameter variations are static per die. A dynamic parameter variation occurs in time during the microprocessor operation as environmental and workload conditions change, which is the focus of this paper. Examples of dynamic parameter variations include supply voltage ðV CC Þ droops, temperature changes, and transistor aging. V CC droops result from abrupt changes in microprocessor switching activity, inducing large current transients in the power delivery system. The magnitude and duration of a V CC droop depend on the interaction of capacitive and inductive parasitics at the board, package, and die levels with changes in current demand [1], [2]. V CC droops primarily affect circuits globally across the die and may occur with frequencies ranging in delay from a few nanoseconds (i.e., high frequency) to a few microseconds (i.e., low frequency). High-frequency V CC droops traditionally result in the largest V CC magnitude change, and thus, the most severe V CC droop [2]. In today's high-performance microprocessors, the high-frequency V CC droop is the dominant dynamic variation source affecting performance and energy efficiency. Temperature variations depend on workload, environmental conditions, and the heat-removal capability of the package. Temperature changes at a relatively slow time scale and generally affects a large portion of the die area. Transistor aging slowly degrades the drive current over time as a function of gate bias and temperature conditions. Higher gate voltages or temperatures accelerate the transistor aging effect. After removing the gate bias, the drive current degradation from aging starts to recover. For this reason, transistor aging and recovery are highly sensitive to the local transistor activity factor and state probability.Conventional microprocessor designs build in clock frequency ðF CLK Þ and/or V CC guardbands to ensure correct functionality while in the presence of worst-case dynamic variations. Consequently, these Editor's notes: This paper focuses on techniques to build more effective circuits for dynamic variation tolerance. Three main approaches are presented based on adaptive circuits, error detection and recovery techniques, and adaptive clock distribution. The tradeoffs in effectiveness and overhead of these different solutions are discussed.