A Chemical Solution Approach to Epitaxial Metal Nitride Thin Films

Luo, Hongmei; Lin, Yuan; Wang, Haiyan; Lee, Joon Hwan; Suvorova, Natalya; Mueller, Alexander; Burrell, Anthony K.; McCleskey, T. Mark; Bauer, Elizabeth; Usov, I.O.; Hawley, M. E.; Holesinger, T. G.; Jia, Q. X.

doi:10.1002/adma.200801959

Cited by 34 publications

(31 citation statements)

References 45 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Hence, the large quantity of 'active' atomic hydrogen produced by the pyrolysis of the group V hydride gas results in clean removal of carbon-containing fragments from the growth surface. 59 In addition, aerosol-assisted vapour phase processing has been investigated for the synthesis of GaN powders and reduced pressure aerosol deposition using AlN powder produced 10 mm thick AlN films on glass or metal substrates. The most successful replacement for AsH 3 is tertiarybutylarsine ( t BuAsH 2 ) as it is a liquid and has a convenient vapour pressure of 81 Torr at 10 1C.…”

Section: Groups 13 and 15 (Iii-v) Thin Filmsmentioning

confidence: 99%

Solution based CVD of main group materials

2016

View full text Add to dashboard Cite

This critical review focuses on the solution based chemical vapour deposition (CVD) of main group materials with particular emphasis on their current and potential applications. Deposition of thin films of main group materials, such as metal oxides, sulfides and arsenides, have been researched owing to the array of applications which utilise them including solar cells, transparent conducting oxides (TCOs) and window coatings. Solution based CVD processes, such as aerosol-assisted (AA)CVD have been developed due to their scalability and to overcome the requirement of suitably volatile precursors as the technique relies on the solubility rather than volatility of precursors which vastly extends the range of potentially applicable compounds. An introduction into the applications and precursor requirements of main group materials will be presented first followed by a detailed discussion of their deposition reviewed according to this application. The challenges and prospects for further enabling research in terms of emerging main group materials will be discussed.

show abstract

Section: Groups 13 and 15 (Iii-v) Thin Filmsmentioning

confidence: 99%

Solution based CVD of main group materials

2016

View full text Add to dashboard Cite

show abstract

“…59 Noteworthy, is a report by Luo et al describing the polymer-assisted deposition (PAD) of a series of metal-nitride layers such as TiN, AlN, GaN and NbN. 60,61 In the PAD process, the polymer not only controls the viscosity of the metal-polymer solution but can also bind the metal ions often facilitating a homogenous distribution of the precursor. From our own experimental data and from those in the literature, it can be presumed that the selection of solvent (solutions) plays an important role in the deposition and can have a positive impact on enhanced film uniformity.…”

Section: Thin Film Characterisationmentioning

confidence: 99%

Facile preparation of copper nitride powders and nanostructured films

et al. 2016

View full text Add to dashboard Cite

show abstract

“…A higher T a results in a shift of the reflectance minimum towards the values reported for c-TiN [29,30]. This shift stems from Al depletion of the TiN-rich phase and the continuous transformation of c-AlN to w-AlN, exhibiting a high transparency of ∼80% between wavelengths of 300 and 1000 nm [30]. In other words, while w-AlN turns transparent, the coating approaches the golden color of c-TiN with increasing decomposition state.…”

Section: Resultsmentioning

confidence: 96%

Temperature driven evolution of thermal, electrical, and optical properties of Ti–Al–N coatings

et al. 2012

View full text Add to dashboard Cite

Monolithic single phase cubic (c) Ti1−xAlxN thin films are used in various industrial applications due to their high thermal stability, which beneficially effects lifetime and performance of cutting and milling tools, but also find increasing utilization in electronic and optical devices. The present study elucidates the temperature-driven evolution of heat conductivity, electrical resistivity and optical reflectance from room temperature up to 1400 °C and links them to structural and chemical changes in Ti1−xAlxN coatings. It is shown that various decomposition phenomena, involving recovery and spinodal decomposition (known to account for the age hardening phenomenon in c-Ti1−xAlxN), as well as the cubic to wurtzite phase transformation of spinodally formed AlN-enriched domains, effectively increase the thermal conductivity of the coatings from ∼3.8 W m−1 K−1 by a factor of three, while the electrical resistivity is reduced by one order of magnitude. A change in the coating color from metallic grey after deposition to reddish-golden after annealing to 1400 °C is related to the film structure and discussed in terms of film reflectivity.

show abstract

A Chemical Solution Approach to Epitaxial Metal Nitride Thin Films

Cited by 34 publications

References 45 publications

Solution based CVD of main group materials

Solution based CVD of main group materials

Facile preparation of copper nitride powders and nanostructured films

Temperature driven evolution of thermal, electrical, and optical properties of Ti–Al–N coatings

Contact Info

Product

Resources

About