A charge-trapping-based technique to design low-voltage BiCMOS logic circuits

Yeo, Kiat Seng; Rofail, S.S.

doi:10.1109/4.654950

Cited by 6 publications

(1 citation statement)

References 15 publications

(18 reference statements)

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“…From the simulated graph of input-output of FGMOS inverter in series with MOSFET inverter, it can be seen that by varying the Vc, the switching threshold is possible to be programmed and eventually can be reduced. Therefore, FGMOS implementation is definitely suitable as an alternative technique in order to achieve low voltage and low power circuit design [17].…”

Section: Fgmos Based Invertermentioning

confidence: 99%

Implementation of floating gate MOSFET in inverter for threshold voltage tunability

et al. 2017

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Abstract. This paper presents the ability of floating gate MOSFET (FGMOS) threshold voltage to be programmed or tuned which is exploited to improve the performance of electronic circuit design. This special characteristic owns by FGMOS is definitely contributes towards low voltage and low power circuit design. The comparison of threshold voltage between FGMOS and conventional NMOS is done in order to prove that FGMOS is able to produce a lower threshold voltage compared to conventional NMOS. In addition, in this paper, an implementation of FGMOS into inverter circuit is also done to show the programmability of FGMOS threshold voltage. The operations of the inverter circuits are verified using Sypnopsys simulation in 0.1µm CMOS technology with supply voltage of 1.8V.

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Section: Fgmos Based Invertermentioning

confidence: 99%