A charge pump system with new regulation and clocking scheme

Abstract

A novel charge pump system with new regulation and clock generating techniques is proposed and verified in a 0.13 µm CMOS process. Rather than generating the reference voltage by band-gap reference (BGR) and the detected voltage by high voltage divider in the conventional regulation, both voltage reference and division of proposed pump system are implemented by single new circuit. Besides, the conventional oscillator for clock input of charge pump system is removed while an adaptive clock generation scheme is introduced to reduce the power consumption and shrink the system size. The experiment results show that the pump system can produce a stable and smooth output with a small ripple, and the high output accuracy is comparable to the conventional solution equipped with BGR. Moreover, the power consumption of the pump controlling is reduced by about 80% while the size of pump system is decreased by about 25%. Therefore, the proposed regulated charge pump (RCP) is very suitable for ultra-low power and high precision applications, for example, the embedded nonvolatile memories (eNVMs).

A Regulated Charge Pump with Extremely Low Output Ripple

“…However, their ripple is larger, and they consume considerably larger real estate. The circuit of [22], on the other hand, is very compact. However, while it is able to produce a voltage that is large-enough for injection, the maximum load current is quite small and would likely be limiting to FG programming applications.…”

Regulated Charge Pumps: A Comparative Study by Means of Verilog-AMS

“…The output resistance modulation is a widely adopted regulation scheme to set the output voltage under different output load condition. This kind of feedback is commonly used in various application fields and, as shown in Figure 9, it is made-up by the N-stage CP, a voltage divider, a voltage comparator and, depending on the controlled parameter (i.e., clock frequency or duty cycle), a Voltage Controlled Oscillator (VCO) [35][36][37][38] or a Pulse Width Modulator (PWM) [39,40]. It is worth noting that, although the rearranging strategy is the best solution in terms of area occupation, the pumping capacitance redistribution changes the operative zone of the CP.…”

A high-performance wordline voltage-generating system for low-power low-voltage flash memory

“…In recent years, flash memory has been widely used in automotive electronics, internet-of-thing (IoT), Bluetooth headsets and other electronics portable equipment (cellular phones, palm-top computers, etc.) due to its flexibility, high speed and cost-effectiveness [1,2,3,4,5]. Flash cells sharing the same gate in flash memory constitute the socalled wordline, which exhibits a purely capacitive behavior [6,7].…”