2014
DOI: 10.1021/nl403659x
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A Charge Parity Ammeter

Abstract: A metallic double dot is measured with radio frequency reflectometry. Changes in the total electron number of the double dot are determined via single electron tunnelling contributions to the complex electrical impedance. Electron counting experiments are performed by monitoring the impedance, demonstrating operation of a single electron ammeter without the need for external charge detection.

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Cited by 4 publications
(5 citation statements)
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“…Analogously to the magnitude response, we observe this phase shift Df at the edges of the conductive regions demonstrating dispersive readout of the charge state of a few-electron quantum dot system. Phase changes of the order of 1 mrad are easily resolved, translating into capacitance detection of B1 aF, smaller than the BfF quantum capacitance of strongly coupled quantum systems 25 . NATURE COMMUNICATIONS | DOI: 10.1038/ncomms7084 ARTICLE Experimental charge sensitivity.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Analogously to the magnitude response, we observe this phase shift Df at the edges of the conductive regions demonstrating dispersive readout of the charge state of a few-electron quantum dot system. Phase changes of the order of 1 mrad are easily resolved, translating into capacitance detection of B1 aF, smaller than the BfF quantum capacitance of strongly coupled quantum systems 25 . NATURE COMMUNICATIONS | DOI: 10.1038/ncomms7084 ARTICLE Experimental charge sensitivity.…”
Section: Resultsmentioning
confidence: 99%
“…While the high-frequency polarizability of quantum systems is well understood in terms of Sisyphus resistance 22 , and statedependent quantum or tunnelling capacitance [22][23][24][25] , the sensitivity of gate detection has only been reported at the me Hz À 1/2 range for GaAs 19,26 . In other semiconductor materials, charge and spin readout have been achieved [27][28][29][30][31][32] and fast detectors have been demonstrated [33][34][35] but little progress has been made towards gate-based sensing 36 .…”
mentioning
confidence: 99%
“…1(d), consists of L, the circuit losses R d and the variable capacitor C 0 = C p + C d placed in parallel and coupled to the line by C c . R d represents dielectric losses in the device and the PCB, and can contain dissipative terms arising from Sisyphus processes [21,26,27,34]. The parasitic capacitance, C p , combines contributions from the device and the PCB.…”
Section: Device and Resonatormentioning
confidence: 99%
“…The SDD pattern is defined by electron beam lithography, the metal deposited by multiple-angle thermal evaporation and the tunnel barriers formed by controlled in situ oxidation. In previous work we characterized the normal state behavior of similar devices [20], but here we focus on properties arising from superconductivity.We measure the amplitude and phase of a low power (−121 dBm) radio-frequency signal reflected from a lumped element resonant circuit which, along with the SDD, is maintained at the base temperature of a dilution refrigerator [ Fig. 1(b)].…”
mentioning
confidence: 99%
“…The SDD pattern is defined by electron beam lithography, the metal deposited by multiple-angle thermal evaporation and the tunnel barriers formed by controlled in situ oxidation. In previous work we characterized the normal state behavior of similar devices [20], but here we focus on properties arising from superconductivity.…”
mentioning
confidence: 99%