A carbon nano-tube field effect transistor based stable, low-power 8T static random access memory cell with improved write access time

Sachdeva, Ashish; Kumar, Deepak; Abbasian, Erfan

doi:10.1016/j.aeue.2023.154565

Cited by 36 publications

(18 citation statements)

References 52 publications

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“…45nm GPDK files are used in CMOS, whereas, for 45nm CNTFET Verilog-A CNTFET Model by Stanford university has been utilized. 34 A. Sachdeva et al 32 has represented nMOSFET and nCNTFET sweep for input and output characteristics at 1V supply voltage at typical V T . On a similar trend, pMOSFET and pCNTFET sweeps for input and output characteristics at 1V supply voltage have been presented.…”

Section: Cntfet: An Overviewmentioning

confidence: 99%

A CNTFET Based Bit-Line Powered Stable SRAM Design for Low Power Applications

Sachdeva

Sharma

Gupta

et al. 2023

ECS J. Solid State Sci. Technol.

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Higher charge mobility, gate control, and better electrostatics are the key reasons that make a carbon nanotube field effect transistor (CNTFET) a better candidate as the successor of conventional complementary metal oxide semiconductor transistors. However, the increased charge mobility also enhances the leakage power. This work uses CNTFET for designing a low-power eight-transistor static random access memory (8T SRAM) cell. The leakage power of the proposed cell is reduced by 2.21× compared to conventional 6T SRAM at 0.3 V with similar CNTFET parameters. The read and write power delay product of the proposed design is improved by 1.02× and 1.85×, respectively. Moreover, the read/write/ hold static noise margin of the proposed cell is also enhanced by 1.98×/ 0.99×/ 1.01×, respectively, compared to the conventional 6T design. The proposed cell is also compared with three already proposed CNTFET based 8T SRAM designs. Cadence Virtuoso simulation tool and Stanford University 32 nm CNTFET verilog-A model file are used to achieve simulation results.

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Section: Cntfet: An Overviewmentioning

confidence: 99%

A CNTFET Based Bit-Line Powered Stable SRAM Design for Low Power Applications

Sachdeva

Sharma

Gupta

et al. 2023

ECS J. Solid State Sci. Technol.

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“…So, there is a need to look for different potential alternatives to CMOS. It is found that carbon nanotube field‐effect transistors (CNTFET) and graphene nanoribbon field‐effect transistors (GNRFET) have a higher power of switch, curves with more ideal voltage, and better mobility, consequently, they can be favorable replacements for CMOS 11–14 …”

Section: Introductionmentioning

confidence: 99%

“…It is found that carbon nanotube field-effect transistors (CNTFET) and graphene nanoribbon field-effect transistors (GNRFET) have a higher power of switch, curves with more ideal voltage, and better mobility, consequently, they can be favorable replacements for CMOS. [11][12][13][14] GNRFET, unlike CNTFET, is compatible with the existing CMOS manufacturing technologies. CNTFET has alignment and transfer-related issues, which can be resolved by GNRFET.…”

mentioning

confidence: 99%

An ultra‐low power and energy‐efficient ternary Half‐Adder based on unary operators and two ternary 3:1 multiplexers in 32‐nm GNRFET technology

Abbasian,

Orouji,

Taghipour Anvari

et al. 2023

Circuit Theory & Apps

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SummaryInternet‐of‐Things (IoTs)‐based embedded systems require energy‐efficient designs for long‐term operation. To achieve energy‐efficient designs, multiple‐valued logic (MVL) circuits and graphene nanoribbon field‐effect transistors (GNRFETs) are used instead of binary logic circuits and complementary metal‐oxide‐semiconductor (CMOS), respectively. This paper presents a novel ultra‐low power and energy‐efficient ternary Half‐Adder (THA) circuit based on unary operators, two power supplies (dual‐VDD), VDD and VDD/2, and two ternary 3:1 multiplexers in 32 nm GNRFET technology. The superiority of the proposed design are improvements between 2.86% and 60% in transistor count, between 86.12% and 97.15% in power consumption, and between 58.14% and 98.39% in power‐delay‐product (PDP) compared to existing THA circuits. Moreover, the proposed THA circuit is also implemented with 32 nm carbon nanotube field‐effect transistors (CNTFETs). Simulation results indicate that the proposed GNRFET‐based THA circuit increases delay by 1.74 × and reduces power/PDP by 89.41%/81.63% compared to its CNTFET‐based counterpart.

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“…[1][2][3] However, shrinking the feature size of the metal-oxidesemiconductor field-effect transistor (MOSFET) beyond 32 nm has led to critical problems such as high current leakage, large parametric variations, unreliability, short-channel effects, and decreasing gate control. [4][5][6][7] These problems reduce the suitability of the MOSFET for power/energy-efficient applications. 5 In response, researchers have proposed various new alternative solutions and technologies to traditional MOSFET technology, such as fin-based FET (FinFET), [8][9][10][11][12][13][14] carbon nanotube-based FET (CNTFET), 6,7,15,16 and graphene nanoribbon-based FET (GNRFET).…”

mentioning

confidence: 99%

“…[4][5][6][7] These problems reduce the suitability of the MOSFET for power/energy-efficient applications. 5 In response, researchers have proposed various new alternative solutions and technologies to traditional MOSFET technology, such as fin-based FET (FinFET), [8][9][10][11][12][13][14] carbon nanotube-based FET (CNTFET), 6,7,15,16 and graphene nanoribbon-based FET (GNRFET). 4,[17][18][19] Among these emerging technologies, GNRFET offers excellent properties and is compatible with existing silicon-based MOSFET, and is an attractive option for achieving higher performance and efficiency in future electronic devices.…”

mentioning

confidence: 99%

A Power Efficient 32 nm Ternary Multiplier using Graphene Nanoribbon Field-Effect Transistor Technology

Rohani,

Emrani Zarandi

2023

ECS J. Solid State Sci. Technol.

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To address interconnections and energy issues associated with binary logic, designers are increasingly turning to ternary logic. One effective approach to implementing ternary logic-based circuits is to use a multiple-threshold voltage (multi-Vth) design. In particular, graphene nanoribbon (GNR)-based field-effect transistors (GNRFETs) are a promising alternative to complementary metal-oxide-semiconductor (CMOS) technology for sub-32nm feature sizes, as GNRs have excellent properties that can overcome scaling issues in CMOS. This paper introduces a ternary multiplier implemented with 32 nm GNRFET technology, which demonstrates high efficiency with only 26 transistors. Simulation results show that the proposed multiplier improves power dissipation and product-delay-power (PDP) by at least 37.30% and 22.22%, respectively, compared to existing multiplier designs when run at 0.9V. Moreover, our proposed design is implemented with a carbon nanotube-based FET (CNTFET) technology. The GNRFET-based multiplier improved power and PDP by 41.77% and 30%, respectively in the cost of increasing the delay by 25%, compared to its CNTFET-based equivalent. Finally, we analyze the proposed multiplier under the process and environmental parameters variations of GNRFET technology. Overall, our results demonstrate the advantages of using GNRFET technology for implementing ternary logic-based circuits and provide insight into the impact of different design choices on performance.

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A carbon nano-tube field effect transistor based stable, low-power 8T static random access memory cell with improved write access time

Cited by 36 publications

References 52 publications

A CNTFET Based Bit-Line Powered Stable SRAM Design for Low Power Applications

A CNTFET Based Bit-Line Powered Stable SRAM Design for Low Power Applications

An ultra‐low power and energy‐efficient ternary Half‐Adder based on unary operators and two ternary 3:1 multiplexers in 32‐nm GNRFET technology

A Power Efficient 32 nm Ternary Multiplier using Graphene Nanoribbon Field-Effect Transistor Technology

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