A Calibration-Free Synthesizable Odometer Featuring Automatic Frequency Dead Zone Escape and Start-up Glitch Removal

Islam, Tahmida; Kim, Junkyu; Kim, Chris H.; Tipple, David; Nelson, M. E.; Jin, Robert; Jarrar, Anis

doi:10.1109/irps48227.2022.9764518

Cited by 1 publication

(2 citation statements)

References 5 publications

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“…The recovery traces shown in all panels in Figure 10 first show that the ∆Frequency (%) starts at an elevated percentage value due to the previous stress. For instance, after only 60 ms of stress at 2.4 V, the ∆Frequency starts at ~5%, which can be considered a large degradation for such a small stress phase when compared to other works, like [ 68 ]. Moreover, if we focus on the last panel on the right, after an accumulated stress time of 3000 s and nine cycles of recovery, the ∆Frequency starts at ~40%.…”

Section: Resultsmentioning

confidence: 82%

“…This also clarifies that, even after executing 100 s of circuit recovery at nominal voltage and room temperature after each stress phase, the accumulated degradation cannot be fully recovered, and more time and/or a higher temperature need to be applied to effectively de-trap the charges that were The recovery traces shown in all panels in Figure 10 first show that the ∆Frequency (%) starts at an elevated percentage value due to the previous stress. For instance, after only 60 ms of stress at 2.4 V, the ∆Frequency starts at ~5%, which can be considered a large degradation for such a small stress phase when compared to other works, like [68]. Moreover, if we focus on the last panel on the right, after an accumulated stress time of 3000 s and nine cycles of recovery, the ∆Frequency starts at ~40%.…”

Section: Regular-ro-based Monitors: Frequency Degradation and Recoverymentioning

confidence: 73%

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An In-Depth Study of Ring Oscillator Reliability under Accelerated Degradation and Annealing to Unveil Integrated Circuit Usage

Diaz-Fortuny,

Saraza-Canflanca,

Bury

et al. 2024

Micromachines

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The reliability and durability of integrated circuits (ICs), present in almost every electronic system, from consumer electronics to the automotive or aerospace industries, have been and will continue to be critical concerns for IC chip makers, especially in scaled nanometer technologies. In this context, ICs are expected to deliver optimal performance and reliability throughout their projected lifetime. However, real-time reliability assessment and remaining lifetime projections during in-field IC operation remain unknown due to the absence of trustworthy on-chip reliability monitors. The integration of such on-chip monitors has recently gained significant importance because they can provide real-time IC reliability extraction by exploiting the fundamental physics of two of the major reliability degradation phenomena: bias temperature instability (BTI) and hot carrier degradation (HCD). In this work, we present an extensive study of ring oscillator (RO)-based degradation and annealing monitors designed on our latest 28 nm versatile array chip. This test vehicle, along with a dedicated test setup, enabled the reliable statistical characterization of BTI- and HCD-stressed as well as annealed RO monitor circuits. The versatility of the test vehicle presented in this work permits the execution of accelerated degradation tests together with annealing experiments conducted on RO-based reliability monitor circuits. From these experiments, we have constructed precise annealing maps that provide detailed insights into the annealing behavior of our monitors as a function of temperature and time, ultimately revealing the usage history of the IC.

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Section: Resultsmentioning

confidence: 82%

Section: Regular-ro-based Monitors: Frequency Degradation and Recoverymentioning

confidence: 73%

An In-Depth Study of Ring Oscillator Reliability under Accelerated Degradation and Annealing to Unveil Integrated Circuit Usage

Diaz-Fortuny,

Saraza-Canflanca,

Bury

et al. 2024

Micromachines

View full text Add to dashboard Cite

show abstract

A Calibration-Free Synthesizable Odometer Featuring Automatic Frequency Dead Zone Escape and Start-up Glitch Removal

Cited by 1 publication

References 5 publications

An In-Depth Study of Ring Oscillator Reliability under Accelerated Degradation and Annealing to Unveil Integrated Circuit Usage

An In-Depth Study of Ring Oscillator Reliability under Accelerated Degradation and Annealing to Unveil Integrated Circuit Usage

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