A $C$-Band InAs/InP Quantum Dot Semiconductor Mode-Locked Laser Emitting 403-GHz Repetition Rate Pulses

Jiao, Zhejing; Liu, Jiaren; Lü, Zhenguo; Zhang, Xiupu; Poole, Philip J.; Barrios, Pedro; Poitras, Daniel

doi:10.1109/lpt.2011.2114340

Cited by 24 publications

(9 citation statements)

References 13 publications

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“…By using an autocorrelator, a pulse train of 2.29 ps duration (810 fs real width) was measured at 437 GHz, with an average output power of 1 mW. This work was further improved by demonstration of 403 GHz pulse repetition rate with a pulse width of 268 fs at 110 mA and 563 fs at 112 mA CW current injection from a similar FBG based external cavity configuration and utilizing 3×850 µm 2 Qdot laser device (with free spectral range 50.25 GHz) in the C-band [148]. This is illustrated in Figs.…”

Section: Self-pulsationmentioning

confidence: 92%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, innovation in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Eventual achievements for lasers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. In this article, we review the progress of both Qdots and Qdash devices based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance.2

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Section: Self-pulsationmentioning

confidence: 92%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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“…However, the pulse repetition rate is usually limited by the bandwidth of the intracavity modulator. To mitigate this limitation, filtering of highly stable low-repetition-rate optical combs utilizing cavities such as Fabry-Perot etalons can be used [6]. This scheme is not flexible as it requires highly precise control of ultrahigh finesse etalons, which limits the repetition rate to the free spectral range of the filter.…”

mentioning

confidence: 99%

All-optical pulse generation based on gain-induced four-wave mixing in a semiconductor optical amplifier

Helmy

2013

Opt. Lett.

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“…We also measure and record the transmission characteristics of the DD-MZM, which are depicted in Fig. 2 [20]. We have measured and recorded the light output versus current curve at a temperature of 18°C, which is shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Simple optical frequency comb generation using a passively mode-locked quantum dot laser

Liu

Zhang

et al. 2017

Optics Communications

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A $C$-Band InAs/InP Quantum Dot Semiconductor Mode-Locked Laser Emitting 403-GHz Repetition Rate Pulses

Cited by 24 publications

References 13 publications

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

All-optical pulse generation based on gain-induced four-wave mixing in a semiconductor optical amplifier

Simple optical frequency comb generation using a passively mode-locked quantum dot laser

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