A broadband power detector with temperature and process compensation

Gao, Yixin; Xu, Weigang; Kong, Chenyang; Tang, Zihui

doi:10.1109/asicon.2017.8252577

Cited by 2 publications

(2 citation statements)

References 5 publications

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“…Unlike other UWB or broadband RF power detectors [ 7 , 8 , 10 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 ], the UWB Fe-Co-B planar antenna is an integral part of the proposed sensor. Such integration reduces the form factor, eliminates any need for post integration using external components, and enables one to batch fabricate the device at a low cost.…”

Section: Discussionmentioning

confidence: 99%

“…The authors in [ 15 ] presented the design of a short channel CMOS-based UWB power detector that has a large dynamic range when used with an additional on-chip matching network. In [ 10 ], it was mentioned that “though the peak detection of RF power is suitable for constant-envelope or low peak-to-average ratio modulated signals [ 16 ], RMS detection is preferred for high peak-to-average ratio modulated signals due to better accuracy.” In [ 17 ], a CMOS-based wideband power detector with high temperature stability within −55 °C to 125 °C and low process-dependent variations was presented; however, the detector’s working frequency range is rather low, from 70 MHz to 1 GHz. The authors in [ 18 ] reported that the short channel characteristics of deep submicron technology CMOS, which are also process dependent, cause a deviation of the CMOS I-V characteristics from the square-law domain to result in lower detection sensitivity.…”

Section: Introductionmentioning

confidence: 99%

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A MEMS Ultra-Wideband (UWB) Power Sensor with a Fe-Co-B Core Planar Inductor and a Vibrating Diaphragm Capacitor

Vejella

Chowdhury

2021

Sensors

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The design of a microelectromechanical systems (MEMS) ultra-wideband (UWB) RMS power sensor is presented. The sensor incorporates a microfabricated Fe-Co-B core planar inductor and a microfabricated vibrating diaphragm variable capacitor on adhesively bonded glass wafers in a footprint area of 970 × 970 µm2 to operate in the 3.1–10.6 GHz UWB frequency range. When exposed to a far-field UWB electromagnetic radiation, the planar inductor acts as a loop antenna to generate a frequency-independent voltage across the MEMS capacitor. The voltage generates a coulombic attraction force between the diaphragm and backplate that deforms the diaphragm to change the capacitance. The frequency-independent capacitance change is sensed using a transimpedance amplifier to generate an output voltage. The sensor exhibits a linear capacitance change induced voltage relation and a calculated sensitivity of 4.5 aF/0.8 µA/m. The sensor can be used as a standalone UWB power sensor or as a 2D array for microwave-based biomedical diagnostic imaging applications or for non-contact material characterization. The device can easily be tailored for power sensing in other application areas such as, 5G, WiFi, and Internet-of-Things (IoT). The foreseen fabrication technique can rely on standard readily available microfabrication techniques.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A MEMS Ultra-Wideband (UWB) Power Sensor with a Fe-Co-B Core Planar Inductor and a Vibrating Diaphragm Capacitor

Vejella

Chowdhury

2021

Sensors

View full text Add to dashboard Cite

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A Novel Bias Circuit Technique to Reduce the PVT Variation of the Ring Oscillator Frequency

Kumar

Nagulapalli

Vishvakarma

2022

J CIRCUIT SYST COMP

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Phase Locked Loop (PLL) is an on-chip clock generator for timing-centric electronic systems. Voltage Controlled Oscillator (VCO) is the key element for high-performance PLLs. A detailed qualitative explanation has been given to describe VCO operation. It is shown from simulation results that the variation of small signal transconductance ([Formula: see text]) is the main dominant source of frequency and gain ([Formula: see text]) variation in a VCO. In this work, simulation results for the conventional ring oscillator are presented which demonstrates [Formula: see text] times variation in [Formula: see text] across Process Voltage Temperature (PVT) corners. Such huge sensitivity to PVT is undesirable for high bandwidth PLL design. To mitigate this sensitivity, a constant-gm bias circuit is proposed in this paper, with a detailed mathematical analysis. A prototype of 4-stage ring oscillator with center frequency of 5[Formula: see text]GHz is developed in 65[Formula: see text]nm TSMC CMOS technology, and post-layout simulation results are carried out. Results show that maximum [Formula: see text] variation of 28% and frequency variation of 17% at a given control voltage. Temperature sensitivity has been decreased from 19.3% to 7% using the proposed biasing technique. Proposed solution consumes 2.4[Formula: see text]mW power from 1[Formula: see text]V power supply.

show abstract

A broadband power detector with temperature and process compensation

Cited by 2 publications

References 5 publications

A MEMS Ultra-Wideband (UWB) Power Sensor with a Fe-Co-B Core Planar Inductor and a Vibrating Diaphragm Capacitor

A MEMS Ultra-Wideband (UWB) Power Sensor with a Fe-Co-B Core Planar Inductor and a Vibrating Diaphragm Capacitor

A Novel Bias Circuit Technique to Reduce the PVT Variation of the Ring Oscillator Frequency

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