A Broadband Current Sensor based on the X-Hall Architecture

Abstract

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Hall-Effect Current Sensors: Principles of Operation and Implementation Techniques

“…The main advantage of Hall plates realized on silicon is the straightforward integration with standard CMOS technology, allowing to implement a series of dedicated circuits and systems addressing the nonidealities [64], [65]. Also, complex digital circuits can be integrated for the realization of smart sensors [66], [67]. A noteworthy approach dealing with the offset voltage problem in symmetric Hall plates is the spinningcurrent (SC) technique [68].…”

“…However, only the latter is discussed here, as it involves the main design challenges. The AFE must fulfill many requirements, among which [67]:…”

“…In addition, the SC itself limits the BW to less than 1 4Tspin . Broader BWs can be achieved by replacing SC with passive offset compensation techniques and improving the DDA with current-feedback solutions [31], [67].…”

A Review of Megahertz Current Sensors for Megahertz Power Converters

“…1) Wide bandwidth: Capturing fine switching details of a WBG device demands its accompanied current sensor to have a wide bandwidth, preferably from DC to the MHz range [8]- [10]. For instance, to capture the full rise time Tr of 20 ns of silicon carbide (SiC) device C2M0080120D from CREE [11] would demand a minimum bandwidth of BW = 0.35/Tr = 17.5 MHz, according to [2].…”

“…The final converter can then be less costly with a much higher power density [13], [14]. Consequently, its integrated current sensors must be miniaturized too without compromising sensing accuracy and reliability [10], [15].…”