A Broadband 4.5–15.5-GHz SiGe Power Amplifier With 25.5-dBm Peak Saturated Output Power and 28.7% Maximum PAE

Kerhervé, Eric; Demirel, Nejdat; Ghiotto, Anthony; Larie, Aurélien; Deltimple, Nathalie; Pham, Jean-Marie; Mancuso, Y.; Garrec, Patrick

doi:10.1109/tmtt.2015.2415490

Cited by 24 publications

(11 citation statements)

References 20 publications

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“…It also had the best output power flatness, which was ±0.8 dB in the 6-18 GHz band. Compared to [1], this work clearly shows better performances in gain, gain flatness, input reflection, and output reflection characteristics. The proposed PAIC exhibited a higher PAE compared to [5].…”

Section: Resultsmentioning

confidence: 84%

“…Broadband impedance matching techniques have been used to report broadband PAICs [1][2][3]. A broadband PAIC with a differential cascode structure was designed using a 0.13 µm SiGe BiCMOS process and it exhibited a gain from 11 dB to 16.6 dB and output power of from 21.3 to 25.5 dBm for the frequency band of from 4.5 to 15.5 GHz [1]. In spite of using on-chip transformers for broadband impedance matching, the flatness characteristics for gain and output power was not so good as ±2.8 dB and ±2.1 dB, respectively.…”

Section: Introductionmentioning

confidence: 99%

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Frequency Selective Degeneration for 6–18 GHz GaAs pHEMT Broadband Power Amplifier Integrated Circuit

Yoo

et al. 2020

Electronics

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In this paper, a frequency selective degeneration technique using a parallel network with a resistor and capacitor is proposed for a 6–18 GHz GaAs pseudomorphic high electron mobility transistor (pHEMT) broadband power amplifier integrated circuit (PAIC). The proposed degeneration network is applied to the source of the transistor to flatten the frequency response of the transistor in conjunction with feedback and resistor biasing circuits. An almost uniform frequency response was achieved at the wide frequency band through optimizing the values of the capacitor and resistor for the degeneration circuit. Single-section matching networks for small chip sizes were adopted for the two-stage amplifier following the flat frequency characteristics of the degenerated transistor. The proposed broadband PAIC for the 6 to 18 GHz band was fabricated using a 0.15 μm GaAs pHEMT process and had a chip size of 1.03 × 0.87 mm2. The PAIC exhibited gain of 15 dB to 17.2 dB, output power of 20.5 dBm to 22.1 dBm, and linear output power of 11.9 dBm to 13.45 dBm, which satisfies the IMD3 of −30 dBc in the 6–18 GHz band. Flatness for the gain and output power was achieved as ±1.1 dB and ±0.8 dB, respectively.

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Section: Resultsmentioning

confidence: 84%

Section: Introductionmentioning

confidence: 99%

Frequency Selective Degeneration for 6–18 GHz GaAs pHEMT Broadband Power Amplifier Integrated Circuit

Yoo

et al. 2020

Electronics

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“…Broadband systems have better scalability in terms of potential compatibility with future wireless communication standards. With the large-scale deployment of new wireless applications, the demand for the development of high-integration and low-cost broadband MMIC power amplifier circuits from the C-band to the Ku-band is increasing, and there are already many related applications [5][6][7][8][9][10]. Many pivotal points in the design of broadband PAs need special attention.…”

Section: Introductionmentioning

confidence: 99%

Design of a Broadband MMIC Driver Amplifier with Enhanced Feedback and Temperature Compensation Technique

et al. 2022

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This paper presents a broadband GaN pseudo high-electron-mobility transistor (pHEMT) two-stage driver amplifier based on an enhanced feedback technique for a wideband system. Through well-designed parameter values of the feedback and the matching structure of the circuit, a relatively flat frequency response was obtained over a wide frequency band. Simultaneously, in order to reduce the fluctuation of current caused by the environmental temperature, a bias circuit with quiescent current temperature compensation was designed. The driver power amplifier, which was implemented in the form of a monolithic microwave integrated circuit (MMIC), was designed to drive a broadband high-power amplifier. The designed broadband driver amplifier for the 6 GHz to 20 GHz frequency band had a very small die size of 1.5 × 1.2 mm2 due to the use of an optimized impedance matching structure. It exhibited a small-signal gain of 12.5 dB and output power of 26 dBm. The flatness of this driver amplifier for gain and output power was achieved as ±2.5 dB and ±1 dB over the entire frequency band, respectively. The experimental results showed up to 35 dBm in the OIP3, and the current variation range was ±5 mA after using the temperature compensation bias circuit.

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“…According to the target level, the mainstream broadband schemes for PAs reported in the most recent literature can be roughly divided into three categories. In the architecture aspect, the major ones are distributed, balanced, and differential amplifiers that are capable of achieving more than a one-octave bandwidth via artificial transmission lines, 3 dB couplers, and balun transformers, respectively [1][2][3]. However, they generally have the evident drawback of bulky size, and some of them could suffer from significant losses or poor efficiency, restricting their use to certain scenarios.…”

Section: Introductionmentioning

confidence: 99%

Design of an Efficient 24–30 GHz GaN MMIC Power Amplifier Using Filter-Based Matching Networks

et al. 2022

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A broadband GaN MMIC power amplifier (PA) with compact dimensions of 1.94 × 0.83 mm2 is presented for 5G millimeter-wave communication. To guarantee output capability at the operating band edges where serious performance degradation is likely to occur, the appropriate large-signal matching model and optimal impedance domain need to be carefully determined through load-pull analysis. Broadband matching networks (MNs) in the lowpass form are thereafter developed based on the Chebyshev filter synthesis theory. Using high-pass interstage MN in conjunction with parallel RC lossy circuits to compensate for the transistor’s negative gain roll-off slope ensures a flat frequency response. The input MN is designed as a band-pass filter due to the reactance extracted from the input side of the stabilized device exhibiting series LC resonance characteristics. Measured on-wafer pulsed results for the proposed three-stage PA demonstrate up to 30.9 dBm of output power, more than 28.6 dB of small-signal gain, and a peak power-added efficiency (PAE) of 35.6% at 27 GHz. Both uniform gain and saturated output power (Psat) are achieved across 24–30 GHz with fluctuations of less than 0.8 dB.

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A Broadband 4.5–15.5-GHz SiGe Power Amplifier With 25.5-dBm Peak Saturated Output Power and 28.7% Maximum PAE

Cited by 24 publications

References 20 publications

Frequency Selective Degeneration for 6–18 GHz GaAs pHEMT Broadband Power Amplifier Integrated Circuit

Frequency Selective Degeneration for 6–18 GHz GaAs pHEMT Broadband Power Amplifier Integrated Circuit

Design of a Broadband MMIC Driver Amplifier with Enhanced Feedback and Temperature Compensation Technique

Design of an Efficient 24–30 GHz GaN MMIC Power Amplifier Using Filter-Based Matching Networks

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