A Brief Review of the State of the Art and Some Recent Results on Electromigration in Integrated Circuit Aluminum Metallization

Abstract

This paper presents a report of the state of the art with respect to the electromigration phenomenon in integrated circuit (IC) metallization. Reported here are some of the latest research efforts, including the authors' research, on the effects of dielectric overcoatings on electromigration in aluminum interconnections. This research has shown that dielectric overcoating of the aluminum stripes yields interconnections with greater mean time between failures than found in many conventional integrated circuits. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.237.29.138 Downloaded on 2015-07-24 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.237.29.138 Downloaded on 2015-07-24 to IP

Sintering Mechanisms of High-Performance Garnet-type Solid Electrolyte Densified by Spark Plasma Sintering

“…Therefore, it was revealed that SPS causes fragmentation of the gold thin foil on the cathode. The fragmentation of thin foils and intrusion into the cathode can be well explained by electromigration, which is often reported for narrow wires in large-scale integration (LSI)[39]. The electron flux on the large current density (~500 A cm −2 ) scatters atoms on their conduction path with their huge momentum, which leads fragmentation and intrusion of the foils.…”

Evolution and Current Status of Aluminum Metallization

“…The values of Ea found are listed in Table ItI. Many values of Ea were obtained by lifetesting (142, 144, [164][165][166][167][168]. Measurement of transported volumes (141, [169][170][171][172] and resistance changes (173,174) were also used and resultant Ea values are included.…”