A biristor based on a floating-body silicon nanowire for biosensor applications

Moon, Dong‐Il; Peycelon, Maxime; Kim, Jee-Yeon; Ahn, Jae-Hyuk; Park, Tae Jung; Choi, Yang‐Kyu

doi:10.1063/1.4789904

Cited by 12 publications

(4 citation statements)

References 12 publications

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“…1c) as integrating a stronger input results in reaching threshold levels more frequently. Low voltage impact ionization (II) based n+/p/n+ selector (I-NPN) has been proposed [6][7][8] and the physics has been experimentally validated [9][10] including impact ionization at sub-0.5V in Si NPN device [11]. We propose an adaptation of n+ (10 20 cm 3 , Si, 20nm)/p (4*10 18 cm 3 , Si 0.9 Ge 0.1 , 35nm)/n+ (10 20 cm 3 ,Si, 20nm) device on a 20nm node SOI is shown (Fig.…”

Section: Device Design For Neuronal Functionmentioning

confidence: 99%

An ultra-compact and low power neuron based on SOI platform

Ostwal

Meshram

Rajendran

et al. 2015

2015 International Symposium on VLSI Technology, Systems and Applications

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Analog and digital circuit designs have been proposed to mimic the biological neuron in CMOS compatible learning circuits for "brain" like computing. However, the adaptation of such conventional circuit based strategies requires many devices, large areas and hence power consumption. We propose a neuronal device based on the well-investigated impact-ionization based NPN selector on an SOI platform. The neuronal device has a small footprint (225*F 2 ) and low active power (11.5nW/spike) and provides ~10,000x speed-up over biological timescales. In comparison to analog neuron, ultra-high density (>60x improvement) and low power operation (>5x improvement) are demonstrated.

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Section: Device Design For Neuronal Functionmentioning

confidence: 99%

An ultra-compact and low power neuron based on SOI platform

Ostwal

Meshram

Rajendran

et al. 2015

2015 International Symposium on VLSI Technology, Systems and Applications

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“…Improved non-linearity has been demonstrated by dopant profile engineering [9]. Further improvements in non-linearity and low voltage operation have been proposed [10][11][12][13]. To enable back-end compatibility, sub-430°C epitaxial Si diode fabrication [14] has also been demonstrated.…”

Section: Introductionmentioning

confidence: 96%

Impact of MIM versus NPN selector on dynamic power in bipolar RRAM array

Kumar

Ganguly

2014

2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS)

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Traditionally, DC power reduction based on halfselect based sneak-path leakage reduction has been the primary metric to evaluate the effectiveness of a selector technology in RRAM arrays. In this paper, we show that dynamic power is comparable and even dominant consideration. We compare MIM selector with NPN technology to compare DC and dynamic power. MIM selector has poor non-linearity and high capacitance due to the implementation with thin high-k dielectrics to ensure high on-current density. NPN selector has better non-linearity as well as lower capacitance as p-region can be thick without compromising non-linearity or on-current density. Consequently overall NPN has lower power based on both DC and dynamic power considerations. In NPN technology, dynamic power is comparable to DC power at sub-30nm nodes. It dominates at sub-15nm node at 100MHz while it dominates at sub-50nm nodes at 1GHz. Thus, selector technology needs to be evaluated and even optimized for dynamic power.

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“…Therefore, this device can be used as a memory device [8]. The biristor can also be used as a current pulse generator with a high current rise rate; as a lighting trigger switch through an optical response; and a biosensor through electrical detection [2,9]. Recently, the use of a biristor as a leaky integrate-and-fire neuron in neuromorphic systems has been proposed [10,11].…”

Section: Introductionmentioning

confidence: 99%

Temperature-Dependent Electrical Characteristics of Silicon Biristor

Kim,

Lim

2023

Micromachines

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In this study, we investigate the temperature-dependent electrical characteristics of bistable silicon resistors (biristors) at temperatures ranging from 275 to 400 K. The proposed biristor exhibits low latch voltages owing to the surface accumulation layer transistor concept. Moreover, the biristor was abruptly turned on and off by positive and negative feedback phenomena, respectively. As the temperature increased from 275 to 400 K, the latch-up voltage decreased from 2.131 to 1.696 V, while the latch-down voltage increased from 1.486 to 1.637 V. Mechanisms of temperature-dependent change in latch voltage were analyzed using energy band diagrams. This temperature-dependent analysis on silicon biristor can serve as blueprint for the contribution of stable operation.

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A biristor based on a floating-body silicon nanowire for biosensor applications

Cited by 12 publications

References 12 publications

An ultra-compact and low power neuron based on SOI platform

An ultra-compact and low power neuron based on SOI platform

Impact of MIM versus NPN selector on dynamic power in bipolar RRAM array

Temperature-Dependent Electrical Characteristics of Silicon Biristor

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