“…Particularly, molybdenum disulfide (MoS 2 ), a family member of TMDs, has a thickness-dependent band gap of 1.8 eV for monolayer and 1.2 eV for bulk, high electron mobility (40–480 cm 2 /V s), , and high Seebeck coefficient . These unique properties make MoS 2 a fitting material candidate for flexible devices, , photodetectors, − field-effect transistors, ,− space applications, , gas sensors, neuromorphic computing, − biomimetic sensing, , and so forth. Numerous approaches have been utilized to achieve a layered MoS 2 film, such as metal–organic chemical vapor deposition (MOCVD), , CVD, − atomic layer deposition (ALD), physical vapor deposition (PVD), and thermal deposition .…”